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OMH315 PDF даташит

Спецификация OMH315 изготовлена ​​​​«Omnirel» и имеет функцию, называемую «(OMH310 / OMH315) MOSFET».

Детали детали

Номер произв OMH315
Описание (OMH310 / OMH315) MOSFET
Производители Omnirel
логотип Omnirel логотип 

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OMH315 Даташит, Описание, Даташиты
DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET
H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
Dual 50 Volt, 15 And 20 Amp H-Bridge
With Current And Temperature Sensing
In A Low Profile Plastic Package
OMH310
OMH315
FEATURES
• H-Bridge Configuration
• Zener Gate Protection
• 10 m Shunt Resistor
• 2 Linear Thermal Sensors, One For Each Bridge
• Isolated Package
• Output Currents Up To 20 Amps
DESCRIPTION
This series of MOSFET switches is configured as ahttp://www.DataSheet4U.net/ Dual H-Bridge with common VDD
lines, precision series shunt resistor in the source line, and sensing elements to
monitor the substrate temperature of each switch. This device is ideally suited for
Stepping Motor Control applications where size, performance, and efficiency are key.
MAXIMUM RATINGS (TC = @ 25°C)
Part
Number
VDS
(Volts)
RDS(on)
(m )
OMH310
OMH315
50
50
100
70
ID
(Amps)
15
20
Package
MP-3
MP-3
ABSOLUTE MAXIMUM RATINGS (TC = @ 25°C unless otherwise noted)
Parameter
OMH310 OMH315 Units
Drain Source Voltage, VDS
Drain-Gate (RGS = 1m ), VDGR
Continuous Drain Current, ID @ TC = 25°C
Continuous Drain Current, ID @ TC = 70°C
Pulse Drain Current, IDM (1)
Maximum Power Dissipation, PD @ TC = 25°C (2)
Maximum Power Dissipation, PD @ TC = 70°C (2)
Linear Derating Factor, Junction-To-Case
50
50
15
11
56
20
11
0.2
50 V
50 V
25 A
16 A
100 A
50 W
18 W
0.33 W/C
Thermal Resistance, Junction-To-Case
5.0 3.0 °C/W
Notes:
(1) Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. (2) Maximum Junction Temperature = 125°C.
2.1
4 11 R0
2.1 - 29
datasheet pdf - http://www.DataSheet4U.net/









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OMH315 Даташит, Описание, Даташиты
OMH310 OMH315
2.1
ELECTRICAL CHARACTERISTICS: OMH310 (TC = 25° unless otherwise specified)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0
Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 70°C
Gate-Body Leakage, VGS = ±12 V
V(BR)DSS
IDSS
IGSS
50
-
-
-
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS = VGS, ID = 250 µA
Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 9.0 A
Static Drain-Source On-Resistance TC = 70°C
On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 V
VGS(th)
RDS(on)
ID(on)
2.0
-
-
15
DYNAMIC CHARACTERISTICS
Forward Transconductance, VDS > ID(on) X RDS(on) Max., ID = 9.0A
Input Capacitance
VDS = 25 V,
Output Capacitance
VGS = 0,
Reverse Transfer Capacitance
f = 1.0 mHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD = 30 V, ID = 3 A,
RGS = 50 , VGS = 10 V
gfs 3.0
Ciss -
Coss
-
Crss -
td(on)
tr
http://www.DataSheet4U.net/
td(off)
tf
-
-
-
-
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
Source - Drain Current Pulsed
Forward On-Voltage, ISD = 28 A, VGS = 0
Reverse Recovery Time
Reverse Recovered Charge
ISD = 13 A, di/dt = 100 A/µSec
ISD
ISDM*
VSD
trr
Qrr
-
-
-
-
-
RESISTOR CHARACTERISTICS
Resistor Tolerance
Temperature Coefficient, -40°C to +70°C
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%
RS 9.0
Tcr -
Typ. Max.
Unit
--V
- 25.0 µA
-
500.0
µA
-
±500
nA
- 4.0 V
- 0.1
- 0.2
--A
- - mho
- 650 pF
- 450 pF
- 280 pF
- 30 ns
- 85 ns
- 90 ns
- 110 ns
- 14
- 56
- 1.8
120 -
0.15 -
A
A
V
ns
µC
10 11
m
100 - ppm
2.1 - 30
datasheet pdf - http://www.DataSheet4U.net/









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OMH315 Даташит, Описание, Даташиты
OMH310 OMH315
ELECTRICAL CHARACTERISTICS: OMH315A (TC = 25° unless otherwise specified)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0
Zero Gate Voltage Drain Current = VGS , VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 70°C
Gate-Body Leakage, VGS = ±12 V
V(BR)DSS
IDSS
IGSS
50
-
-
-
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS = VGS, ID = 250 µA
Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 10 A
Static Drain-Source On-Resistance TC = 70°C
On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 V
VGS(th)
RDS(on)
ID(on)
2.0
-
-
20
DYNAMIC CHARACTERISTICS
Forward Transconductance, VDS > ID(on) X RDS(on) Max., ID = 10 A
Input Capacitance
VDS = 25 V,
Output Capacitance
VGS = 0,
Reverse Transfer Capacitance
f = 1.0 mHz
gfs
Ciss
Coss
Crss
5.0
-
-
-
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD = 30 V, ID = 10 A,
RGS = 4.7 , VGS = 10 V,
RL = 2.4
td(on)
tr
http://www.DataSheet4U.net/
td(off)
tf
-
-
-
-
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
Source - Drain Current (Pulsed)
Forward On-Voltage, ISD = 28 A, VGS = 0
Reverse Recovery Time
Reverse Recovered Charge
ISD = 13 A,di/dt = 100 A/µSec
ISD
ISDM*
VSD
trr
Qrr
-
-
-
-
-
RESISTOR CHARACTERISTICS
Resistor Tolerance
Temperature Coefficient, -40°C to +70°C
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%
RS 9.0
Tcr -
Typ. Max.
--
- 250
- 750
- ±500
- 4.0
- 0.07
- 0.14
--
-
1020
500
120
-
-
-
-
- 50
- 75
- 50
- 50
- 25
- 100
- 2.4
100 -
0.15 -
10 11
100 -
Unit
V
µA
µA
nA
V
A
mho
pF
pF
pF
ns
ns
ns
ns
A
A
V
ns
µC
m
ppm
2.1
2.1 - 31
datasheet pdf - http://www.DataSheet4U.net/










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