NGTB15N120FLWG PDF даташит
Спецификация NGTB15N120FLWG изготовлена «ON Semiconductor» и имеет функцию, называемую «IGBT ( Insulated Gate Bipolar Transistor )». |
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Детали детали
Номер произв | NGTB15N120FLWG |
Описание | IGBT ( Insulated Gate Bipolar Transistor ) |
Производители | ON Semiconductor |
логотип |
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NGTB15N120FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for UPS
and solar applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• 10 ms Short Circuit Capability
• Low Gate Charge
• Soft, Fast Free Wheeling Diode
• These are Pb−Free Devices
Typical Applications
• Solar Inverter
• UPS Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TSC
TJ
1200
30
15
120
V
A
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A
A
30
15
120 A
$20
156
62.5
10
V
W
ms
−55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
15 A, 1200 V
VCEsat = 2.0 V
Eoff = 0.55 mJ
C
G
E
G
CE
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
15N120FL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB15N120FLWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
NGTB15N120FLW/D
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NGTB15N120FLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJC
RqJA
Value
0.80
1.5
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 15 A
VGE = 15 V, IC = 25 A, TJ = 150°C
VGE = VCE, IC = 150 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 15 A, VGE = 15 V
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SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
TJ = 25°C
VCC = 600 V, IC = 15 A
Rg = 10 W
VGE = 0 V/ 15V
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
TJ = 125°C
VCC = 600 V, IC = 15 A
Rg = 10 W
VGE = 0 V/ 15V
Total switching loss
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Min
1200
1.5
−
4.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
2.0
2.2
5.5
−
−
−
3600
110
66
150
28
68
72
19
168
194
1.17
0.55
1.72
70
21
175
310
1.35
0.96
2.31
Max
−
2.2
−
6.5
0.35
2
100
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
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NGTB15N120FLWG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE
=V0GVE,
=IF0=V1,5IFA=,
15 A
TJ = 150°C
TJ = 25°C
IF = 15 A, VR = 400 V
diF/dt = 200 A/ms
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 125°C
IF = 15 A, VR = 400 V
diF/dt = 200 A/ms
Symbol Min Typ Max Unit
VF
1.5 1.8 2.2
2.5
V
trr
− 166 −
ns
Qrr − 1.1 − mc
Irrm
− 12 −
A
trr
− 200 −
ns
Qrr − 1.5 − mc
Irrm
− 15 −
A
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Номер в каталоге | Описание | Производители |
NGTB15N120FLWG | IGBT ( Insulated Gate Bipolar Transistor ) | ON Semiconductor |
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