NGTB25N120IHLWG PDF даташит
Спецификация NGTB25N120IHLWG изготовлена «ON Semiconductor» и имеет функцию, называемую «IGBT ( Insulated Gate Bipolar Transistor )». |
|
Детали детали
Номер произв | NGTB25N120IHLWG |
Описание | IGBT ( Insulated Gate Bipolar Transistor ) |
Производители | ON Semiconductor |
логотип |
9 Pages
No Preview Available ! |
NGTB25N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
• Low Saturation Voltage using Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Case Temperature in IH Cooker Application
• Low Gate Charge
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
50
25
V
http://www.DataSheet4U.net/
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 200 A
IF A
50
25
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
200
$20
192
77
A
V
W
Operating junction temperature
range
TJ −55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
25 A, 1200 V
VCEsat = 1.85 V
Eoff = 0.8 mJ
C
G
E
G
CE
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
25N120IHL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB25N120IHLWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 2
1
Publication Order Number:
NGTB25N120IHLW/D
datasheet pdf - http://www.DataSheet4U.net/
No Preview Available ! |
NGTB25N120IHLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJC
RqJA
Value
0.65
2.0
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 25 A, TJ = 150°C
VGE = VCE, IC = 250 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 25 A, VGE = 15 V
http://www.DataSheet4U.net/
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
TJ = 25°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
TJ = 125°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 25 A
VGE = 0 V, IF = 25 A, TJ = 150°C
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(off)
tf
Eoff
td(off)
tf
Eoff
VF
Min
1200
−
−
4.5
−
−
−
−
−
−
Typ
−
1.85
2.1
5.5
−
−
−
4700
155
100
200
38
100
235
160
0.8
250
225
1.9
1.7
1.8
Max
−
2.3
−
6.5
0.5
2.0
100
−
−
−
1.8
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
V
http://onsemi.com
2
datasheet pdf - http://www.DataSheet4U.net/
No Preview Available ! |
NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
120
TJ = 25°C
100
80
VGE = 20 to 13 V
11 V
10 V
60
40 9 V
20 8 V
0 7V
012 3 45
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
120
TJ = 150°C
100
VGE = 20 to 11 V
80
10 V
60
9V
40
8V
20
7V
0
012 3 45
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
120
VGE = 20 to 13 V
100
80
TJ = −40°C
60
11 V
10 V
120
100
80
60
40
20
0
0
9V
7V
8V
12 3 4
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
5
40
http://www.DataSheet4U.net/
20
0
0
TJ = 150°C
TJ = 25°C
5 10
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
15
10,000
1000
Cies
100
10
0
Coes
Cres
25 50 75 100 125 150 175
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Typical Capacitance
200
120
100
TJ = 25°C
TJ = 125°C
80
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VF, FORWARD VOLTAGE (V)
Figure 6. Diode Forward Characteristics
http://onsemi.com
3
datasheet pdf - http://www.DataSheet4U.net/
Скачать PDF:
[ NGTB25N120IHLWG.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NGTB25N120IHLWG | IGBT ( Insulated Gate Bipolar Transistor ) | ON Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |