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NGTG50N60FLWG PDF даташит

Спецификация NGTG50N60FLWG изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «IGBT ( Insulated Gate Bipolar Transistor )».

Детали детали

Номер произв NGTG50N60FLWG
Описание IGBT ( Insulated Gate Bipolar Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NGTG50N60FLWG Даташит, Описание, Даташиты
NGTG50N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for High Speed Switching
5 ms ShortCircuit Capability
These are PbFree Devices
Typical Applications
Power Factor Correction
Solar Inverters
Uninterruptable Power Supply (UPS)
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Shortcircuit withstand time
VGE = 15 V, VCE = 400 V,
TJ +150°C
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
VCES
IC
ICM
tSC
VGE
PD
600
100
50
200
5
$20
223
89
V
A
http://www.DataSheet4U.net/
A
ms
V
W
Operating junction temperature
range
TJ 55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
50 A, 600 V
VCEsat = 1.65 V
C
G
E
G
CE
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
G50N60FL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTG50N60FLWG
Package
TO247
(PbFree)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 0
1
Publication Order Number:
NGTG50N60FLW/D
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NGTG50N60FLWG Даташит, Описание, Даташиты
NGTG50N60FLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontoambient
Symbol
RqJC
RqJA
Value
0.56
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
Collectoremitter saturation voltage
Gateemitter threshold voltage
Collectoremitter cutoff current, gate
emitter shortcircuited
Gate leakage current, collectoremitter
shortcircuited
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 25 A, TJ = 150°C
VGE = VCE, IC = 350 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
VGE = 20 V , VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 50 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turnon delay time
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Rise time
Turnoff delay time
Fall time
Turnon switching loss
TJ = 25°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V*
Turnoff switching loss
Total switching loss
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
TJ = 150°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V*
Turnoff switching loss
Total switching loss
*Includes diode reverse recovery loss using NGTB50N60FLWG.
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Min
600
1.40
4.5
Typ
1.65
1.85
5.5
7302
220
190
310
60
150
116
43
292
78
1.1
0.6
1.7
110
45
300
105
1.4
1.1
2.5
Max
1.90
6.5
0.5
2
200
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
http://onsemi.com
2
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NGTG50N60FLWG Даташит, Описание, Даташиты
NGTG50N60FLWG
TYPICAL CHARACTERISTICS
250
TJ = 25°C
200 VGE = 17 V to 13 V
150
100
11 V
10 V
50 9 V
7V 8V
0
01 2 345 67
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 1. Output Characteristics
8
300
TJ = 150°C
250
VGE = 17 V to 13 V
200
150
100
50
0
0
11 V
10 V
9V
8V
7V
1 2 345 67
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Output Characteristics
8
250
TJ = 55°C
200 VGE = 17 V to 13 V
150
100
11 V
10 V
50 7 V
9V
0 8V
01 2 345 678
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 3. Output Characteristics
200
180
160
140
120
100
80
60http://www.DataSheet4U.net/
40
20
0
0
TJ = 25°C TJ = 150°C
4 8 12
VGE, GATEEMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
16
3.00
2.50
2.00
1.50
1.00
0.50
0.0075
IC = 100 A
IC = 50 A
IC = 25 A
IC = 5 A
25 25 75 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
100000
10000
Cies
1000
Coes
100
Cres
10
175 0 10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
http://onsemi.com
3
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Номер в каталогеОписаниеПроизводители
NGTG50N60FLWGIGBT ( Insulated Gate Bipolar Transistor )ON Semiconductor
ON Semiconductor

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