NGTG50N60FLWG PDF даташит
Спецификация NGTG50N60FLWG изготовлена «ON Semiconductor» и имеет функцию, называемую «IGBT ( Insulated Gate Bipolar Transistor )». |
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Детали детали
Номер произв | NGTG50N60FLWG |
Описание | IGBT ( Insulated Gate Bipolar Transistor ) |
Производители | ON Semiconductor |
логотип |
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NGTG50N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Power Factor Correction
• Solar Inverters
• Uninterruptable Power Supply (UPS)
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
VCES
IC
ICM
tSC
VGE
PD
600
100
50
200
5
$20
223
89
V
A
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A
ms
V
W
Operating junction temperature
range
TJ −55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
50 A, 600 V
VCEsat = 1.65 V
C
G
E
G
CE
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
G50N60FL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTG50N60FLWG
Package
TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 0
1
Publication Order Number:
NGTG50N60FLW/D
datasheet pdf - http://www.DataSheet4U.net/
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NGTG50N60FLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJA
Value
0.56
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 25 A, TJ = 150°C
VGE = VCE, IC = 350 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
VGE = 20 V , VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 50 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
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Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V*
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V*
Turn−off switching loss
Total switching loss
*Includes diode reverse recovery loss using NGTB50N60FLWG.
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Min
600
1.40
−
4.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
1.65
1.85
5.5
−
−
−
7302
220
190
310
60
150
116
43
292
78
1.1
0.6
1.7
110
45
300
105
1.4
1.1
2.5
Max
−
1.90
−
6.5
0.5
2
200
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
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NGTG50N60FLWG
TYPICAL CHARACTERISTICS
250
TJ = 25°C
200 VGE = 17 V to 13 V
150
100
11 V
10 V
50 9 V
7V 8V
0
01 2 345 67
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
8
300
TJ = 150°C
250
VGE = 17 V to 13 V
200
150
100
50
0
0
11 V
10 V
9V
8V
7V
1 2 345 67
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
8
250
TJ = −55°C
200 VGE = 17 V to 13 V
150
100
11 V
10 V
50 7 V
9V
0 8V
01 2 345 678
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
200
180
160
140
120
100
80
60http://www.DataSheet4U.net/
40
20
0
0
TJ = 25°C TJ = 150°C
4 8 12
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
16
3.00
2.50
2.00
1.50
1.00
0.50
0.00−75
IC = 100 A
IC = 50 A
IC = 25 A
IC = 5 A
−25 25 75 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
100000
10000
Cies
1000
Coes
100
Cres
10
175 0 10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
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