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SZNUP2115L PDF даташит

Спецификация SZNUP2115L изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Dual Line FlexRay Bus Protector».

Детали детали

Номер произв SZNUP2115L
Описание Dual Line FlexRay Bus Protector
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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SZNUP2115L Даташит, Описание, Даташиты
NUP2115L, SZNUP2115L
Dual Line FlexRay
Bus Protector
The SZ/NUP2115L has been designed to protect the FlexRay
transceiver from ESD and other harmful transient voltage events. This
device provides bidirectional protection for each data line with a
single compact SOT23 package, giving the system designer a low
cost option for improving system reliability and meeting stringent
EMI requirements.
Features
200 W Peak Power Dissipation per Line (8 x 20 msec Waveform)
Diode Capacitance Matching
Low Reverse Leakage Current (< 100 nA)
Low Capacitance HighSpeed FlexRay Data Rates
IEC Compatibility: IEC 6100042 (ESD): Level 4
IEC 6100044 (EFT): 50 A – 5/50 ns
IEC 6100045 (Lighting) 3.0 A (8/20 ms)
ISO 76371, Nonrepetitive EMI Surge Pulse 2, 8.0 A
(1 x 50 ms)
ISO 76373, Repetitive Electrical Fast Transient (EFT)
EMI Surge Pulses, 50 A (5 x 50 ns)
Flammability Rating UL 94 V0
SZ Prefix for Automotive and Other Applications Requiring Unique
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Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These are PbFree Devices
Applications
Automotive Networks
FlexRay Bus
http://onsemi.com
SOT23
DUAL BIDIRECTIONAL
VOLTAGE SUPPRESSOR
200 W PEAK POWER
PIN 1
PIN 2
SOT23
CASE 318
STYLE 27
PIN 3
© Semiconductor Components Industries, LLC, 2013
April, 2013 Rev. 0
MARKING DIAGRAM
25WMG
G
1
25W
M
G
= Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1 Publication Order Number:
NUP2115L/D
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SZNUP2115L Даташит, Описание, Даташиты
NUP2115L, SZNUP2115L
MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
Symbol
Rating
Value
Unit
PPK Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1)
200 W
TJ
TJ
TL
ESD
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature (10 s)
Human Body Model (HBM)
Machine Model (MM)
IEC 6100042 Specification (Contact)
55 to 150
55 to 150
260
8.0
400
23
°C
°C
°C
kV
V
kV
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min Typ Max Unit
VRWM
VBR
IR
VC
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
(Note 2)
24
IT = 1 mA (Note 3)
26.2
32
VRWM = 24 V
15 100
IPP = 1 A (8 x 20 ms Waveform) 33.4 36.6
(Note 4)
V
V
nA
V
VC Clamping Voltage
IPP = 3 A (8 x 20 ms Waveform)
(Note 4)
44 50
V
IPP Maximum Peak Pulse Current
8 x 20 ms Waveform (Note 4)
− − 3.0 A
CJ Capacitance
VR = 0 V, f = 1 MHz (Line to GND)
10 pF
DC Diode Capacitance Matching
VR = 0 V, 5 MHz (Note 5)
0.26 2
%
2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
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3. VBR is measured at pulse test current IT.
4. Pulse waveform per Figure 1.
5. DC is the percentage difference between CJ of lines 1 and 2 measured according to the test conditions given in the electrical characteristics
table.
ORDERING INFORMATION
Device
Package
Shipping
NUP2115LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
SZNUP2115LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
NUP2115LT3G
SOT23
(PbFree)
10,000 / Tape & Reel
SZNUP2115LT3G
SOT23
(PbFree)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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SZNUP2115L Даташит, Описание, Даташиты
NUP2115L, SZNUP2115L
110
100
90
80
70
60
50
40
30
20
10
0
0
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
WAVEFORM
PARAMETERS
tr = 8 ms
td = 20 ms
ct
td = IPP/2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5 10 15 20 25 30
30
35
40
45 50
t, TIME (ms)
VC, CLAMPING VOLTAGE (V)
Figure 1. Pulse Waveform, 8 × 20 ms
Figure 2. Clamping Voltage vs Peak Pulse Current
9
8
125°C
7
6 25°C
5
4
3
2 0 5 10 15 20 25
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
25
55°C +25°C
TA = +150°C
20
15
10
5
50
45
40
35
30
25
20
15
10http://www.DataSheet4U.net/
5
0
20
TA = 55°C
22 24 26
25°C
65°C
125°C
28 30 32 34
VBR, VOLTAGE (V)
Figure 4. VBR versus IT Characteristics
120
100
80
60
40
20
0
0 1 234
IL, LEAKAGE CURRENT (nA)
Figure 5. IR versus Temperature Characteristics
5
0
60 30
0 30 60 90
TEMPERATURE (°C)
120 150 180
Figure 6. Temperature Power Dissipation Derating
http://onsemi.com
3
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Номер в каталогеОписаниеПроизводители
SZNUP2115LDual Line FlexRay Bus ProtectorON Semiconductor
ON Semiconductor

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