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What is H27UCG8T2MYR?

This electronic component, produced by the manufacturer "Hynix", performs the same function as "64Gb (8192M x 8bit) NAND Flash".


H27UCG8T2MYR Datasheet PDF - Hynix

Part Number H27UCG8T2MYR
Description 64Gb (8192M x 8bit) NAND Flash
Manufacturers Hynix 
Logo Hynix Logo 


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H27UCG8T2M Series
64Gb (8192M x 8bit) NAND Flash
64Gb Flash
H27UCG8T2M
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Rev 1.0/ Aug. 2010
1
datasheet pdf - http://www.DataSheet4U.net/

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H27UCG8T2MYR equivalent
1.2. PIN DESCRIPTION
H27UCG8T2M Series
64Gb (8192M x 8bit) NAND Flash
Pin Name
Description
I/O0-I/O7
DATA INPUTS/OUTPUTS
The I/O pins is used to COMMAND LATCH cycle, ADDRESS INPUT cycle, and DATA in-out cycles during
read / write operations. The I/O pins float to High-Z when the device is deselected or the outputs are
disabled.
COMMAND LATCH ENABLE
CLE This input activates the latching of the I/O inputs inside the Command Register on the Rising edge of Write
Enable (WE#).
ADDRESS LATCH ENABLE
ALE This input activates the latching of the I/O inputs inside the Address Register on the Rising edge of Write
Enable (WE#).
CHIP ENABLE
This input controls the selection of the device. When the device is busy, CE# low does not deselect the
CE# memory. The device goes into Stand-by mode when CE# goes High during the device is in Ready state.
The CE# signal is ignored when device is in Busy state, and will not enter Standby mode even if the CE#
goes high.
WE#
WRITE ENABLE
This input acts as clock to latch Command, Address and Data. The I/O inputs are latched on the rise edge
of WE#.
READ ENABLE
RE# The RE# input is the serial data-out control, and when active drives the data onto the I/O bus. Data is
valid tREA after the falling edge of RE# which also increments the internal column address counter by one.
WP#
WRITE PROTECT
The WP# pin, when Low, provides a hardware protection against undesired write operations. Hardware
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Write Protection is activated when the Write Protect pin is low. In this condition modify operation do not
start and the content of the memory is not altered. Write Protect pin is not latched by Write Enable to
ensure the protection even during the power up phases.
R/B#
READY / BUSY
The Ready/Busy output is an Open Drain pin that signals the state of the memory.
VccQ SUPPLY VOLTAGE FOR I/O BUFFER
VssQ
GROUND FOR I/O BUFFER
Vcc
SUPPLY VOLTAGE
The VCC supplies the power for all the operations. (Read, Write, and Erase).
Vss GROUND
NC NO CONNECTED
Note:
A 0.1uF capacitor should be connected between the Vcc Supply Voltage pin and the Vss Ground pin to decouple the
current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during pro
gram and erase operations.
Rev 1.0 / Aug. 2010
5
datasheet pdf - http://www.DataSheet4U.net/


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H27UCG8T2MYR electronic component.


Information Total 63 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
H27UCG8T2MYRThe function is 64Gb (8192M x 8bit) NAND Flash. HynixHynix

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