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NCV8873 PDF даташит

Спецификация NCV8873 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Automotive Grade Non-Synchronous Boost Controller».

Детали детали

Номер произв NCV8873
Описание Automotive Grade Non-Synchronous Boost Controller
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NCV8873 Даташит, Описание, Даташиты
NCV8873
Automotive Grade
Non-Synchronous Boost
Controller
The NCV8873 is an adjustable output nonsynchronous boost
controller which drives an external Nchannel MOSFET. The device
uses peak current mode control with internal slope compensation. The
IC incorporates an internal regulator that supplies charge to the gate
driver.
Protection features include internallyset softstart, undervoltage
lockout, cyclebycycle current limiting and thermal shutdown.
Additional features include low quiescent current sleep mode and
externallysynchronizable switching frequency.
Features
Peak Current Mode Control with Internal Slope Compensation
0.2 V $3% Reference Voltage for Constant Current Loads
Fixed Frequency Operation
Wide Input Voltage Range of 3.2 V to 40 V, 45 V Load Dump
Input Undervoltage Lockout (UVLO)
Internal SoftStart
Low Quiescent Current in Sleep Mode
CyclebyCycle Current Limit Protection
HiccupMode Overcurrent Protection (OCP)
Thermal Shutdown (TSD)
This is a PbFree Device
www.onsemi.com
8
1
SOIC8
D SUFFIX
CASE 751
MARKING
DIAGRAM
8
8873xx
ALYW
G
1
8873xx = Specific Device Code
xx = 00 or 01
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbFree Package
PIN CONNECTIONS
EN/SYNC 1
ISNS 2
GND 3
GDRV 4
8 VFB
7 VC
6 VIN
5 VDRV
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
NCV887300D1R2G SOIC8 2500 / Tape &
(PbFree)
Reel
NCV887301D1R2G SOIC8 2500 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
August, 2016 Rev. 6
1
Publication Order Number:
NCV8873/D









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NCV8873 Даташит, Описание, Даташиты
NCV8873
EN/
SYNC
EN/SYNC 1
VC 7
RC
CC
TEMP
OSC
SC
FAULT
LOGIC
CLK
DRIVE
LOGIC
VDRV
CL CSA
+
Gm
SS
Vref
6 VIN
Vg
Cg
CDRV
5 VDRV
L
MURA110T3G
Vo
4 GDRV
Q D2
NVTFS5826NL
Co
2 ISNS
3 GND
RSNS
Dn
8 VFB
RF1
Figure 1. Simplified Block Diagram and Application Schematic
PACKAGE PIN DESCRIPTIONS
Pin No.
Pin
Symbol
Function
1 EN/SYNC Enable and synchronization input. The falling edge synchronizes the internal oscillator. The part is disabled
into sleep mode when this pin is brought low for longer than the enable timeout period.
2
ISNS
Current sense input. Connect this pin to the source of the external NMOSFET, through a currentsense
resistor to ground to sense the switching current for regulation and current limiting.
3
GND
Ground reference.
4
GDRV
Gate driver output. Connect to gate of the external NMOSFET. A series resistance can be added from
GDRV to the gate to tailor EMC performance. An RGND = 15 kW (typical) GDRVGND resistor is strongly
recommended.
5
VDRV
Driving voltage. Internallyregulated supply for driving the external NMOSFET, sourced from VIN. Bypass
with a 1.0 mF ceramic capacitor to ground.
6 VIN Input voltage. If bootstrapping operation is desired, connect a diode from the input supply to VIN, in addi-
tion to a diode from the output voltage to VDRV and/or VIN.
7 VC Output of the voltage error amplifier. An external compensator network from VC to GND is used to stabilize
the converter.
8 VFB Output voltage feedback. A resistor from the output voltage to VFB with another resistor from VFB to GND
creates a voltage divider for regulation and programming of the output voltage.
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NCV8873 Даташит, Описание, Даташиты
NCV8873
ABSOLUTE MAXIMUM RATINGS (Voltages are with respect to GND, unless otherwise indicated)
Rating
Value
Unit
Dc Supply Voltage (VIN)
0.3 to 40
V
Peak Transient Voltage (Load Dump on VIN)
45 V
Dc Supply Voltage (VDRV, GDRV)
12 V
Peak Transient Voltage (VFB)
0.3 to 6
V
Dc Voltage (VC, VFB, ISNS)
0.3 to 3.6
V
Dc Voltage (EN/SYNC)
0.3 to 6
V
Dc Voltage Stress (VIN VDRV)*
0.7 to 40
V
Operating Junction Temperature
40 to 150
°C
Storage Temperature Range
65 to 150
°C
Peak Reflow Soldering Temperature: PbFree, 60 to 150 seconds at 217°C
265 peak
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*An external diode from the input to the VIN pin is required if bootstrapping VDRV and VIN off of the output voltage.
PACKAGE CAPABILITIES
ESD Capability (All Pins)
Characteristic
Moisture Sensitivity Level
Package Thermal Resistance
1. 1 in2, 1 oz copper area used for heatsinking.
Human Body Model
Machine Model
JunctiontoAmbient, RqJA (Note 1)
Value
w2.0
w200
1
100
Unit
KV
V
°C/W
Ordering Options
The NCV8873 features several variants to better fit a
multitude of applications. The table below shows the typical
values of parameters for the parts that are currently
available.
TYPICAL VALUES
YY
NCV887300
Dmax
86.5%
NCV887301
87.5%
fs
1000 kHz
400 kHz
tss
1.6 ms
4.0 ms
Sa
130 mV/ms
30 mV/ms
Vcl
400 mV
200 mV
Isrc
800 mA
800 mA
Isink
600 mA
600 mA
VDRV
6.3 V
6.3 V
DEFINITIONS
Symbol
Characteristic
Dmax
Sa
Isink
Maximum duty cycle
Slope compensating ramp
Gate drive sinking current
Symbol
fs
Vcl
VDRV
Characteristic
Switching frequency
Current limit trip voltage
Drive voltage
Symbol
tss
Isrc
Characteristic
Softstart time
Gate drive sourcing current
www.onsemi.com
3










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