7N60L PDF даташит
Спецификация 7N60L изготовлена «Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL MOSFET». |
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Детали детали
Номер произв | 7N60L |
Описание | N-CHANNEL MOSFET |
Производители | Unisonic Technologies |
логотип |
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UNISONIC TECHNOLOGIES CO., LTD
7N60L
7.4 Amps, 600Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 7N60L is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) < 1.2Ω @VGS = 10 V
* Ultra low gate charge (typical 29 nC )
* Low reverse transfer Capacitance ( CRSS = typical 16pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
7N60LL-x-TA3-T
7N60LG-x-TA3-T
7N60LL-x-TF1-T
7N60LG-x-TF1-T
7N60LL-x-TF3-T
7N60LG-x-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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7N60L
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N60L
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600
±30
V
V
Avalanche Current (Note 2)
Continuous Drain Current
IAR 7.4 A
ID 7.4 A
Pulsed Drain Current (Note 1)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IDM
EAS
EAR
dv/dt
29.6 A
600 mJ
14.2 mJ
4.5 V/ns
Power Dissipation
TO-220
TO-220F/TO-220F1
PD
142 W
48 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 22mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤7.4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220
TO-220F/TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
0.88
2.6
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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