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даташит 2SA1020 PDF ( Datasheet )

2SA1020 Datasheet Download - Toshiba Semiconductor

Номер произв 2SA1020
Описание TRANSISTOR (POWER AMPLIFIER APPLICATIONS)
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 



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2SA1020 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications
Power Switching Applications
Low Collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
High-speed switching: tstg = 1.0 µs (typ.)
Complementary to 2SC2655
2SA1020
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
50
5
2
900
150
55 to 150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
IC = −10 mA, IB = 0
VCE = −2 V, IC = −0.5 A
VCE = −2 V, IC = −1.5 A
IC = −1 A, IB = −0.05 A
IC = −1 A, IB = −0.05 A
VCE = −2 V, IC = −0.5 A
VCB = −10 V, IE = 0, f = 1 MHz
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Min Typ. Max Unit
⎯ ⎯ −1.0 µA
⎯ ⎯ −1.0 µA
50
V
70 240
40 ⎯ ⎯
⎯ −0.5
V
⎯ −1.2
V
100 MHz
40 pF
Turn-on time
Switching time Storage time
ton
Output
0.1
20 µs
Input IB2
tstg IB2 IB1
1.0
µs
VCC = −30 V
Fall time
tf IB1 = IB2 = 0.05 A
DUTY CYCLE 1%
0.1
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
1 2004-07-07
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2SA1020 Даташит, Описание, Даташиты
Marking
A1020
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SA1020
2 2004-07-07
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2SA1020 Даташит, Описание, Даташиты
VCE – IC
1.0
Common emitter
0.8
IB = −5 mA
10
Ta = 25°C
20 40 80
120
0.6
160
0.4 200
0.2
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current IC (A)
VCE – IC
1.0
Common emitter
IB = −10 mA
0.8
20
40 60
30
Ta = −55°C
80
0.6 120
160
0.4 200
0.2
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current IC (A)
2SA1020
VCE – IC
1.0
Common emitter
0.8
IB = 5 mA
20 30 40 60 Ta = 100°C
80
120
0.6 160
180
0.4 200
0.2
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current IC (A)
1000
500
300
100
50
30
hFE – IC
Common emitter
VCE = −2 V
Ta = 100°C
25
55
10
0.01
0.03 0.1 0.3
1
Collector current IC (A)
3
VCE (sat) – IC
1
Common emitter
0.5 IC/IB = 20
0.3
0.1
0.05
0.03
Ta = 100°C
55
25
0.01
0.01
0.03 0.1 0.3
1
Collector current IC (A)
3
VBE (sat) – IC
10
Common emitter
5 IC/IB = 20
3
Ta = −55°C
1
0.5 25
0.3 100
0.1
0.01
0.03
0.1 0.3
1
Collector current IC (A)
3
3 2004-07-07
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