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2SA1020 Datasheet Download - Unisonic Technologies

Номер произв 2SA1020
Описание PNP EPITAXIAL SILICON TRANSISTOR
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 



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2SA1020 Даташит, Описание, Даташиты
UTC2SA1020 PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and
power switching applications.
FEATURES
*Low collector saturation voltage:
VCE(sat)=-0.5V(max.) (IC=-1A)
*High speed switching time: tstg=1.0µs(Typ.)
*Complement to UTC 2SC2655
1
SOT-89
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Collector Power Dissipation
PC
Collector Power Dissipation
PC*
Junction Temperature
Tj
Storage Temperature
TSTG
* : Mounted on cermic substrate( 250mm2 × 0.8t )
1:EMITTER 2:COLLECTOR 3:BASE
VALUE
-50
-50
-5
-2
0.5
1
150
-55 ~ +150
UNIT
V
V
V
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector cut-off current
Emitter cut-off current
Collector to emitter breakdown
ICBO
IEBO
V(BR)CEO
VCB=-50V, IE=0
VEB=-5V, IC=0
Ic=-10mA, IB=0
-50
voltage
DC Current Gain
Collector to emitter saturation
hFE1
hFE2
VCE(sat)
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-1.5A
Ic=-1A, IB=-0.05A
70
40
voltage
Base to emitter saturation voltage
VBE(sat)
Ic=-1A, IB=-0.05A
Transition frequency
fT VCE=-2V, Ic=-0.5A
Collector output capacitance
Cob VCB=-10V, IE=0, f=1MHz
Switching time Turn-on time
ton
Storage time
tstg
Fall time
tf
TYP
100
40
0.1
1.0
0.1
MAX
-1.0
-1.0
240
-0.5
-1.2
UNIT
µA
µA
V
V
V
MHz
pF
µs
µs
µs
UTC
UNISONIC TECHNOLOGIES CO. LTD 1
QW-R208-021,A







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2SA1020 Даташит, Описание, Даташиты
UTC2SA1020 PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE1
RANK
RANGE
O
70 - 140
Y
120 - 240
TYPICAL PERFORMANCE CHARACTERISTICS
VCE-IC
-1.0
IB=-5mA
-10
-20
-40 -80
I(tot)
-0.8 mA
-120
-0.6
-160
-0.4 -200
-0.2
0
0
-1.0
COMMON EMITTER
Ta=25
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
Collector Current Ic(A)
VCE-IC
-0.8
IB=-10mA -20
-30 -40 -60
I(tot)
mA
-80
-0.6 -120
-160
-0.4 -200
-0.2
0
0
COMMON EMITTER
Ta=-55
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
Collector Current Ic(A)
VCE-IC
-1.0
-0.8
IB=-5mA
-0.6
-0.4
-20
-30
-40I(-to6t0)
mA
-80
-120
-160
-180
-200
-0.2
0
0
1000
500
300
COMMON EMITTER
Ta=100
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
Collector Current Ic(A)
hFE-Ic
Ta=100
COMMON EMITTER
VCE=-2V
I(tot)
mA
100 25
50 -55
30
10
-0.005 -0.01 -0.03 -0.1 -0.3 -1
Collector Current IC(A)
-3
UTC
UNISONIC TECHNOLOGIES CO. LTD 2
QW-R208-021,A







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2SA1020 Даташит, Описание, Даташиты
UTC2SA1020 PNP EPITAXIAL SILICON TRANSISTOR
VCE(sat)-Ic
-1
COMMON EMITTER
-0.5 IC/IB=20
I(tot)
-0.3 mA
Ta=100
-0.1
-0.05
-0.03
-55
25
VCE(sat)-Ic
-10
COMMON EMITTER
-5 IC/IB=20
I(tot)
-3 mA
-1 -55
-0.5
Ta=10025
-0.3
-0.01
-0.005 -0.01 -0.03 -0.1 -0.3 -1
Collector Current IC(A)
Ic -VBE
-2.0 COMMON EMITTER
VCE=-2V
-1.5
I(tot)
mA
Ta=100
-55
-1.0
-3
25
-0.5
0
0
-0.4 -0.8
-1.2 -1.6
Base Emitter Voltage VBE(V)
-0.1
-0.005 -0.01 -0.03 -0.1 -0.3 -1
Collector Current IC(A)
-3
1.2
1.0 1
0.8
Pc-Ta
1.Mounted on Ceramic
Substrate (250mm2*0.8t)
I(t2o.tT) a=25
mA
0.6 2
0.4
0.2
0
0
20 40
60
80 100 120 140 160
Ambient Temperature Ta
Safe Operation Area
-5
-3
-1
-0.5
Ic max.(pulsed)*
Ic max.(pulsed)*
100ms*
1s*
10ms*
1ms*
-0.3
-0.1
DC OPERATION
Ta=25
-0.05
-0.03
-0.01
*Single nonrepetitive pulse
Ta=25
Curves must be derated
linearly with increase
in temperature
VCEO MAX
-0.3 -1 -3
-10 -30
-100
Collector Emitter Voltage VCE (V)
UTC UNISONIC TECHNOLOGIES
CO. LTD 3
QW-R208-021,A










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