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Número de pieza | NVLJD4007NZ | |
Descripción | Small Signal MOSFET | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NVLJD4007NZ
Small Signal MOSFET
30 V, 245 mA, Dual, N−Channel, Gate ESD
Protection, 2x2 WDFN Package
Features
• Optimized Layout for Excellent High Speed Signal Integrity
• Low Gate Charge for Fast Switching
• Small 2 x 2 mm Footprint
• ESD Protected Gate
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady State = 25°C
VDSS
VGS
ID
30
"10
245
V
V
mA
Power Dissipation
(Note 1)
Steady State = 25°C
PD
755 mW
Pulsed Drain Current
tP v 10 ms
Operating Junction and Storage Temperature
IDM
TJ,
TSTG
1.2 A
−55 to
150
°Chttp://www.DataSheet4U.com/
Continuous Source Current (Body Diode)
ISD 245 mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
166 °C/W
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 0
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on)
Typ @ VGS
1.4 W @ 4.5 V
2.3 W @ 2.5 V
ID MAX
(Note 1)
245 mA
D (6)
D (4)
G (2)
G (5)
S (1)
N−Channel
S (3)
N−Channel
MARKING
DIAGRAM
1
WDFN6
CASE 506AN
1
2
JGG
6
5
3G 4
JG = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
S1 1
D1
6 D1
G1 2
S2 3
D2
5 G2
4 D2
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NVLJD4007NZTAG
NVLJD4007NZTBG
WDFN6
(Pb−Free)
WDFN6
(Pb−Free)
3000/Tape &
Reel
3000/Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NVLJD4007NZ/D
1 page NVLJD4007NZ
TYPICAL PERFORMANCE CURVES
1000
100 Duty Cycle = 0.5
0.20
0.10
10
0.05
0.02
Single Pulse
RqJA Steady State = 166°C/W
1 0.01
1E−06 1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
t, TIME (s)
Figure 12. Thermal Impedance (Junction−to−Ambient)
1E+01
1E+02 1E+03
http://www.DataSheet4U.com/
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NVLJD4007NZ.PDF ] |
Número de pieza | Descripción | Fabricantes |
NVLJD4007NZ | Small Signal MOSFET | ON Semiconductor |
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