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PDF NJW21194G Data sheet ( Hoja de datos )
| Número de pieza | NJW21194G | |
| Descripción | (NJW21193G / NJW21194G) Silicon Power Transistors | |
| Fabricantes | ON Semiconductor | |
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NJW21193G (PNP)
NJW21194G (NPN)
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current − Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
PD
250 Vdc
400 Vdc
5.0 Vdc
400 Vdc
16 Adc
30 Adc
5.0 Adc
200 W
1.6 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
− 65 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
Symbol
RqJC
RqJA
Max
0.625
40
Unit
°C/W
°C/W
http://onsemi.com
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
1
BASE
EMITTER 3
MARKING
4 DIAGRAM
TO−3P
CASE 340AB
STYLES 1,2,3
NJW2119xG
AYWW
1 23
x
G
A
Y
WW
12 3
= 3 or 4
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NJW21193G
NJW21194G
Package
TO−3P
(Pb−Free)
TO−3P
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1
Publication Order Number:
NJW21193/D
1 page  
NJW21193G (PNP) NJW21194G (NPN)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
10000
TC = 25°C
10000
Cib TC = 25°C
Cib
1000
Cob
f(test) = 1 MHz)
100
0.1
1.0 10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 15. NJW21193G Typical Capacitance
1000
f(test) = 1 MHz)
100
0.1 1.0
Cob
10
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. NJW21194G Typical Capacitance
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
100 1000 10000
FREQUENCY (Hz)
100000
Figure 17. Typical Total Harmonic Distortion
http://onsemi.com
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