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NJW21193G PDF даташит

Спецификация NJW21193G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «(NJW21193G / NJW21194G) Silicon Power Transistors».

Детали детали

Номер произв NJW21193G
Описание (NJW21193G / NJW21194G) Silicon Power Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NJW21193G Даташит, Описание, Даташиты
NJW21193G (PNP)
NJW21194G (NPN)
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized
High DC Current Gain
Excellent Gain Linearity
High SOA
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
CollectorEmitter Voltage 1.5 V
Collector Current Continuous
Collector Current Peak (Note 1)
Base Current Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
PD
250 Vdc
400 Vdc
5.0 Vdc
400 Vdc
16 Adc
30 Adc
5.0 Adc
200 W
1.6 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
JunctiontoCase
Thermal Resistance,
JunctiontoAmbient
Symbol
RqJC
RqJA
Max
0.625
40
Unit
°C/W
°C/W
http://onsemi.com
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
1
BASE
EMITTER 3
MARKING
4 DIAGRAM
TO3P
CASE 340AB
STYLES 1,2,3
NJW2119xG
AYWW
1 23
x
G
A
Y
WW
12 3
= 3 or 4
= PbFree Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NJW21193G
NJW21194G
Package
TO3P
(PbFree)
TO3P
(PbFree)
Shipping
30 Units/Rail
30 Units/Rail
© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 1
1
Publication Order Number:
NJW21193/D









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NJW21193G Даташит, Описание, Даташиты
NJW21193G (PNP) NJW21194G (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (nonrepetitive)
(VCE = 80 Vdc, t = 1 s (nonrepetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
BaseEmitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
CollectorEmitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
unmatched
hFE
matched
VCEO(sus)
ICEO
IEBO
ICEX
IS/b
hFE
VBE(on)
VCE(sat)
THD
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
fT
Cob
Min
250
4.0
2.25
20
8
4
Typ
0.8
0.08
Max
100
100
100
80
2.2
1.4
4
500
Unit
Vdc
mAdc
mAdc
mAdc
Adc
Vdc
Vdc
%
MHz
pF
6.5
VCE = 10 V
6.0
PNP NJW21193G
5.5
5V
5.0
4.5
4.0
3.5 TJ = 25°C
ftest = 1 MHz
3.0
0.1
1.0
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
NPN NJW21194G
8.0
7.0
10 V
6.0
5.0
VCE = 5 V
4.0
3.0
2.0
1.0
TJ = 25°C
ftest = 1 MHz
0
10 0.1
1.0
IC COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain
Bandwidth Product
10
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NJW21193G Даташит, Описание, Даташиты
NJW21193G (PNP) NJW21194G (NPN)
TYPICAL CHARACTERISTICS
PNP NJW21193G
NPN NJW21194G
1000 1000
TJ = 100°C
TJ = 100°C
25°C 25°C
100 100
- 25°C
- 25°C
VCE = 20 V
10
0.1 1.0 10 100
IC COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain, VCE = 20 V
VCE = 20 V
10
0.1 1.0 10 100
IC COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain, VCE = 20 V
PNP NJW21193G
1000
NPN NJW21194G
1000
TJ = 100°C
25°C
100
- 25°C
100
TJ = 100°C
25°C
- 25°C
VCE = 5 V
10
0.1 1.0 10
IC COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, VCE = 5 V
100
VCE = 20 V
10
0.1 1.0 10
IC COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain, VCE = 5 V
100
PNP NJW21193G
30
25 1.5 A IB = 2 A
20 1 A
15
0.5 A
10
5.0
0
0 5.0
10
TJ = 25°C
15 20 25
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
NPN NJW21194G
35
IB = 2 A
30
1.5 A
25
1A
20
15 0.5 A
10
5.0
0
0 5.0
10
TJ = 25°C
15 20 25
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
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Номер в каталогеОписаниеПроизводители
NJW21193G(NJW21193G / NJW21194G) Silicon Power TransistorsON Semiconductor
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