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WPM3401 PDF даташит

Спецификация WPM3401 изготовлена ​​​​«JESTEK» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв WPM3401
Описание P-Channel Enhancement Mode MOSFET
Производители JESTEK
логотип JESTEK логотип 

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WPM3401 Даташит, Описание, Даташиты
WPM3401
P-Channel Enhancement Mode MOSFET
Description
The WPM3401 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.
This high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited for low
voltage application, notebook computer power management and
other battery powered circuits where high-side switching.
Features
z -30V/-4.3A,RDS(ON)< 65mŸ@VGS=- 10V
z -30V/-3.4A,RDS(ON)< 90mŸ@VGS=-4.5V
z Super high density cell design for extremely low RDS (ON)
z Exceptional on-resistance and maximum DC current
capability
z SOT23 package design
Application
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
Order information
Part Number
WPM3401-3/TR
http://www.jestek.com.cn
Package
SOT23
Page 1
WPM3401
http://www.jestek.com.cn
P−Channel MOSFET
G1
S2
3D
Top View
Drain
3
WP1U
G
12
Gate Source
U = Date Code
WP1 = Specific Device Code
Shipping
3000 Tape&Reel
Free Datasheet http://www.datasheet4u.com/









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WPM3401 Даташит, Описание, Даташиты
Parameter
Absolute Maximum Ratings (TA=25 кu!nless otherwise specified)
PPaarraammeteerr 
Symlbol
VDS Drain-Source voltage
VGS Gate-Source Voltage
ID Continuous Drain Steady-State TA=25ć
Current
Steady-State TA=70ć
IDM Pulse Drain Current
PD Power Dissipation TA=25ć
TA=70ć
TJ Operating Junction Temperature Range
Tstg Storage Temperature Range
RșJA Thermal Resistance-Junction to Ambient
Value
-30
±20
-4.3
-3.4
-20
2.8
1.8
-55~150
70
Electrical Characteristics
(TA=25к Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-30V,VGS=0V
IDSS VDS=-30V,VGS=0V
TJ=85к
ID(on) VDS= -5V,VGS =-4.5V
RDS(on)
VGS=-10V,ID=-7.2A
VGS=-4.5V,ID=-5.0A
gfs VDS=-15V,ID=-5.7A
VSD IS=-1.3A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID= -3.5A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15ȍ
IDŁ-1.0A,VGEN=-10V
RG=6ȍ
http://www.jestek.com.cn
Page 2
WPM3401
Unit
V
V
A
A
W
ć
ć/W
Min. Typ Max. Unit
-30
V
-0.8 -1.37 -2.5
±100 nA
-1
uA
-5
-10 A
0.055
0.076
13
0.065
0.090
ȍ
S
-0.72 -1.0 V
14 18
3.1 nC
3
700
120 pF
75
8 18
5 18
nS
28 50
13 35
Free Datasheet http://www.datasheet4u.com/









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WPM3401 Даташит, Описание, Даташиты
Typical Performance Characteristis
WPM3401
24
V =10V
GS
20
16
12
V =6V
GS
V =4V
GS
8
V =3V
GS
4
0
012345
V ,Drain-Source voltage(V)
DS
Drain Current VS Drain-Source voltage
180
150
120
V =4.5V
GS
V =6V
90 GS
60
V =10V
GS
30
0 5 10 15 20
I , Drain Current(A)
D
Drain Current vs ON Resistance
0.20
0.16 I =5.7A
D
0.12
0.08
0.04
0
2 4 6 8 10
V ,Gate-Source Voltage(V)
GS
Gate-Source Voltage vs ON Resistance
1.5
1.2
0.9
0.6
0.3
0.0
0.0
0.2 0.4 0.6 0.8
V ,Drain-Source voltage(V)
DS
Drain Current VS Source-Drain Current
http://www.jestek.com .cn
25
V =2V
DS
20
15
10
5
0
0123456
V ,Gate-Source Voltage(V)
GS
Drain Current VS Gate-Source Voltage
1.6
1.4 VGS=-10V
1.2 VGS=-4.5V
1 ID=-5A
0.8
0
Page 3
25 50 75 100 125 150
Temperature (°C)
On-Resistance vs. Junction
175
Free Datasheet http://www.datasheet4u.com/










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