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PDF HITK0204MP Data sheet ( Hoja de datos )

Número de pieza HITK0204MP
Descripción Silicon N Channel MOS FET Power Switching
Fabricantes Renesas 
Logotipo Renesas Logotipo



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HITK0204MP
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 100 mtyp (VGS = 4.5 V, ID = 1.2 A)
Low drive current
High speed switching
2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
Note: Marking is “TG”.
1
2
Preliminary Datasheet
R07DS0482EJ0100
Rev.1.00
Jun 22, 2011
3
D
G 1. Source
2 2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
20
12
2.3
8.0
2.3
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
C
C
R07DS0482EJ0100 Rev.1.00
Jun 22, 2011
Page 1 of 6
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HITK0204MP pdf
HITK0204MP
Dynamic Input Characteristics
40 16
30
20 VDD = 20 V
10 V
VDD = 20 V
10 V
5V
12
VGS 8
10 5 V
VDS
0
012
4
ID = 2.3 A
Tc = 25°C
0
34
Gate Charge Qg (nc)
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
Crss
10
VGS = 0 V
f = 1 MHz
1
05
10
15 20
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
8
10 V
6
Pulse Test
Tc = 25°C
5V
4
2
–5, –10 V
0 VGS = 0 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Preliminary
Switching Characteristics
1000
100
VDD = 10 V
VGS = 4.5 V
Rg = 4.7 Ω
PW = 5 μs
Tc = 25°C
tr
td(off)
td(on)
10
tf
1
0.1 1 10
Drain Current ID (A)
Input Capacitance vs.
Gate to Source Voltage
250
240
230
220
210
200
190
VDS = 0 V
180 f = 1 MHz
170
10 8 6 4 2 0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.7
VGS = 0
0.6
0.5
ID = 10 mA
0.4
0.3
1 mA
0.2
0.1
25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0482EJ0100 Rev.1.00
Jun 22, 2011
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