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CHR3894-QEG PDF даташит

Спецификация CHR3894-QEG изготовлена ​​​​«United Monolithic Semiconductors» и имеет функцию, называемую «Integrated Down Converter».

Детали детали

Номер произв CHR3894-QEG
Описание Integrated Down Converter
Производители United Monolithic Semiconductors
логотип United Monolithic Semiconductors логотип 

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CHR3894-QEG Даташит, Описание, Даташиты
CHR3894-QEG
37-40GHz Integrated Down Converter
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHR3894-QEG is a multifunction
monolithic receiver, which integrates a
balanced cold FET mixer, a LO chain with
buffers associated to a time two multiplier,
and a RF low noise amplifier including gain
control.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
UMS
R3894
YYWW
Main Features
■ Broadband performances: 37-40GHz
■ 13dB Conversion gain
■ 15dBc Image Rejection
■ 2dBm IIP3 without attenuation (GC=-2V)
■ 8dB Gain Control range
■ 4dB Noise Figure for IF>0.1GHz
■ 0dBm LO input Power
■ DC bias: Vd=4V @ Id=250mA
■ 24L-QFN4x5
■ MSL1
20
18
16
14
12
10
8
6
4
2
0
35
Conversion gain (USB mode) @ IF 2GHz
-2V
36
-0.4V
-0.2V
0V
37 38 39
RF Frequency (GHz)
+0.6V
40
41
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
FRF RF frequency range
FLO LO frequency range
FIF IF frequency range
G Conversion gain without attenuation
Min Typ Max Unit
37 40 GHz
17.5
21.0 dB
DC 3.5 dB
10 13
dBm
Ref. : DSCHR3894-QEG2201 -19 jul 12
1/14 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Free Datasheet http://www.datasheet4u.com/









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CHR3894-QEG Даташит, Описание, Даташиты
CHR3894-QEG
37-40GHz Integrated Down Converter
Electrical Characteristics
Tamb.= +25°C, VD = VD1 = +4V (1)
Symbol
Parameter
FRF RF frequency range
FLO LO frequency range
FIF IF frequency range
G Conversion gain without attenuation (2)
G Gain control range
NF Noise Figure for IF>0.1GHz
Im_rej Image rejection (2)
PLO LO Input power
IIP3 Input IP3 without attenuation
IIP3 Input IP3 @ all attenuations
LO RL LO return loss
RF RL RF return loss
VGL LNA DC gate voltage
VGX Multiplier DC gate voltage
GC Gain control DC voltage
IDt Total Drain current (ID+ID1) (3)
Min Typ Max Unit
37 40 GHz
17.5
21.0 GHz
DC 3.5 GHz
10 13
dB
8 dB
4 4.5 dB
12 15
dBc
0 dBm
02
dBm
-2 0
dBm
-12 dB
-7 dB
-0.1 V
-0.9 V
-2 +0.6 V
250 mA
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
(1) VD: LO-chain drain bias voltage. VD1: LNA drain bias voltage.
(2) An external combiner 90° is required on I / Q.
(3) ID: LO-chain drain current, typically 125mA.
(3) ID1: LNA drain current, typically 125mA, should be tuned with VGL.
Note: The total current (IDt) is not affected by the gain control voltage (GC).
Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHR3894-QEG2201 -19 jul 12
2/14 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

CHR3894-QEG Даташит, Описание, Даташиты
37-40GHz Integrated Down Converter
CHR3894-QEG
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
VD, VD1 Drain bias voltages
4.5V
V
IDt Drain bias current
340 mA
VGL, VGX Gate bias voltages
-2 to +0.4
V
GC
P_RF
Gain Control voltage
Maximum peak input power overdrive (2)
-2.5 to +0.8
+15
V
dBm
P_LO
Tj
Maximum LO input power
Junction temperature (2)
+15 dBm
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad No
VD1, VD 10, 11
ID1 10
VGL
9
VGX
12
GC 8
Parameter
DC drain voltages (LNA and LO-chain)
LNA drain current controlled with VGL
LNA DC gate voltage
Multiplier DC gate voltage
Gain control DC voltage
Values
4
125
-0.1
-0.9
-2 to 0.6
Unit
V
mA
V
V
V
Ref. : DSCHR3894-QEG2201 -19 jul 12
3/14 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Free Datasheet http://www.datasheet4u.com/










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Номер в каталогеОписаниеПроизводители
CHR3894-QEGIntegrated Down ConverterUnited Monolithic Semiconductors
United Monolithic Semiconductors

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