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H5TC2G83BFR-xxA PDF даташит

Спецификация H5TC2G83BFR-xxA изготовлена ​​​​«Hynix Semiconductor» и имеет функцию, называемую «2Gb DDR3L SDRAM».

Детали детали

Номер произв H5TC2G83BFR-xxA
Описание 2Gb DDR3L SDRAM
Производители Hynix Semiconductor
логотип Hynix Semiconductor логотип 

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H5TC2G83BFR-xxA Даташит, Описание, Даташиты
2Gb DDR3L SDRAM
2Gb DDR3L SDRAM
Lead-Free&Halogen-Free
(RoHS Compliant)
H5TC2G43BFR-xxA
H5TC2G83BFR-xxA
* Hynix Semiconductor reserves the right to change products or specifications without notice.
Rev. 0.2 / Feb. 2010
1
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H5TC2G83BFR-xxA Даташит, Описание, Даташиты
Revision History
Revision No.
0.1
0.2
History
Initial Release
Added IDD Specification
Draft Date
Dec. 2009
Feb. 2010
Remark
Rev. 0.2 / Feb. 2010
2
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H5TC2G83BFR-xxA Даташит, Описание, Даташиты
Description
The H5TC2G43BFR-xxA, H5TC2G83BFR-xxA and H5TC2G63BFR-xxA are a 2Gb low power Double Data
Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large
memory density, high bandwidth and low power operation at 1.35V. Hynix DDR3L SDRAM provides back-
ward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD
information for details.)
Hynix 2Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of
the clock. While all addresses and control inputs are latched on the rising edges of the clock (falling edges
of the clock), data, data strobes and write data masks inputs are sampled on both rising and falling edges
of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
Device Features and Ordering Information
FEATURES
• VDD=VDDQ=1.35V + 0.100 / - 0.067V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 6, 7, 8, 9, 10 and (11)
supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• 8banks
• Average Refresh Cycle (Tcase of0 oC~95oC)
- 7.8 µs at 0oC ~ 85 oC
- 3.9 µs at 85oC ~ 95 oC
• Auto Self Refresh supported
• JEDEC standard 82ball FBGA(x4/x8)Driver strength
selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• 8 bit pre-fetch
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
* This product in compliance with the RoHS directive.
Rev. 0.2 / Feb. 2010
3
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Номер в каталогеОписаниеПроизводители
H5TC2G83BFR-xxA2Gb DDR3L SDRAMHynix Semiconductor
Hynix Semiconductor

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