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H5TC8G43MMR-xxA PDF даташит

Спецификация H5TC8G43MMR-xxA изготовлена ​​​​«Hynix Semiconductor» и имеет функцию, называемую «8Gb DDR3L SDRAM».

Детали детали

Номер произв H5TC8G43MMR-xxA
Описание 8Gb DDR3L SDRAM
Производители Hynix Semiconductor
логотип Hynix Semiconductor логотип 

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H5TC8G43MMR-xxA Даташит, Описание, Даташиты
8Gb DDR3L SDRAM
8Gb DDR3L SDRAM
(Dual Die Package)
Lead-Free&Halogen-Free
(RoHS Compliant)
H5TC8G43MMR-xxA
H5TC8G83MMR-xxA
* SK hynix reserves the right to change products or specifications without notice.
Rev. 1.1 / Apr. 2013
1
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H5TC8G43MMR-xxA Даташит, Описание, Даташиты
Revision History
Revision No.
1.0
1.1
History
Initial Release
Editorial PKG Dimension
Draft Date
Jun. 2012
Apr. 2013
Remark
Rev. 1.1 / Apr. 2013
2
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H5TC8G43MMR-xxA Даташит, Описание, Даташиты
Description
The H5TC8G43MMR-xxA and H5TC8G83MMR-xxA are a 8Gb low power Double Data Rate III (DDR3L) Syn-
chronous DRAM, ideally suited for the main memory applications which requires large memory density,
high bandwidth and low power operation at 1.35V. DDR3L SDRAM provides backward compatibility with
the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.)
SK hynix 8Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling
edges of the clock. While all addresses and control inputs are latched on the rising edges of the clock (fall-
ing edges of the clock), data, data strobes and write data masks inputs are sampled on both rising and
falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high band-
width.
Device Features and Ordering Information
FEATURES
• VDD=VDDQ=1.35V + 0.100 / - 0.067V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• Average Refresh Cycle (Tcase of0 oC~95oC)
- 7.8 µs at 0oC ~ 85 oC
- 3.9 µs at 85oC ~ 95 oC
• On chip DLL align DQ, DQS and DQS transition with CK • JEDEC standard 78ball FBGA(x4/x8)
transition
• Driver strength selected by EMRS
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Programmable CAS latency 6, 7, 8, 9, 10 and 11
supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Write Levelization supported
• 8 bit pre-fetch
• This product in compliance with the RoHS directive.
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8banks
Rev. 1.1 / Apr. 2013
3
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Номер в каталогеОписаниеПроизводители
H5TC8G43MMR-xxA8Gb DDR3L SDRAMHynix Semiconductor
Hynix Semiconductor

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