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Número de pieza | 7MBR15UF060 | |
Descripción | Power Integrated Module | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 7MBR15UF060 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! SPECIFICATION
Device Name : Power Integrated Module
Type Name : 7MBR15UF060
Spec. No. : MS6M00814
Not recommend for new design.
DATE
N A M E APPROVED
D R A W N Dec.-10- '04 K. Komatsu
CHECKED Dec.-10- '04 O. Ikawa
CHECKED
K. Yamada
Y. Seki
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
1/ 16
H04-004-07b
Free Datasheet http://www.datasheet4u.com/
1 page 5. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified)
Items
Symbols Conditions
Maximum
Ratings
Collector-Emitter voltage
VCES
600
Gate-Emitter voltage
VGES
±20
Ic
Continuous Tc=60℃
15
Tc=25oC
18
Collector current
Icp
1ms
Tc=60℃
30
Tc=25oC
36
-Ic
Continuous Tc=60℃
15
Collector Power Dissipation
Pc 1 device
63
Collector-Emitter voltage
VCES
600
Gate-Emitter voltage
VGES
±20
Ic
Continuous Tc=80℃
10
Tc=25oC
14
Collector current
Icp
1ms
Tc=80℃
20
Tc=25oC
28
Collector Power Dissipation
Pc 1 device
56
Average Output Current
Surge Current (Non-Repetitive)
Io
IFSM
50Hz/60Hz
sine wave
Tj=150oC,10ms
20
210
I2t (Non-Repetitive)
I2t half sine wave
221
Junction temperature
Tj 150
Storage temperature
Tstg
design.Isolation
voltage
between terminal and baseplate(*1)
between thermistor and others (*2)
Viso
AC : 1min.
Mounting Screw Torque
M4
new(*1) All terminals should be connected together when isolation test will be done.
for(*2) Terminal T1 and T2 should be connected together. And another terminals
Not recommendshould be connected together and shorted to baseplate.
-40~ +125
2500
2500
1.3~1.7
Units
V
V
A
A
A
W
V
V
A
A
W
A
A
A2s
oC
oC
V
V
N.m
Fuji Electric Device Technology Co.,Ltd.
MS6M00814 5/16
H04-004-03a
Free Datasheet http://www.datasheet4u.com/
5 Page [ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25oC (typ.) / chip
40
30
VGE=20V 15V 13V
11V
20
9V
10
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125oC (typ.) / chip
40
VGE=20V 15V
30
13V
11V
20
9V
10
0
012345
Collector - Emitter voltage : VCE [ V ]
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.) / chip
40
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25oC (typ.) / chip
10
30
20
10
0
0
1000
Tj=25oC Tj=125 oC
8
Not recommend1 2 3 4
Collector - Emitter voltage : VCE [ V ]
5
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
6
4
for2
new
design.
0
8 10 12 14 16 18
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=8A, Tj= 25oC
500
Ic=30A
15A
7.5A
20 22
25
Cies 400
20
300 15
100 Coes
Cres
0 5 10 15 20 25 30 35
Collector - Emitter voltage : VCE [ V ]
200 10
100 5
00
0 10 20 30 40 50 60 70
Gate charge : Qg [ nC ]
Fuji Electric Device Technology Co.,Ltd.
MS6M00814 11/16
H04-004-03a
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet 7MBR15UF060.PDF ] |
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