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PDF NSBC114EDP6 Data sheet ( Hoja de datos )
| Número de pieza | NSBC114EDP6 | |
| Descripción | Dual NPN Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
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MUN5211DW1,
NSBC114EDXV6,
NSBC114EDP6
Dual NPN Bias Resistor
Transistors
R1 = 10 kW, R2 = 10 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5211DW1T1G,
SMUN5211DW1T1G
SOT−363
3,000/Tape & Reel
NSBC114EDXV6T1G
SOT−563
4,000/Tape & Reel
NSBC114EDXV6T5G
SOT−563
8,000/Tape & Reel
NSBC114EDP6T5G
SOT−963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
SOT−363
CASE 419B
6
7A M G
G
1
SOT−563
CASE 463A
7A M G
G
1
SOT−963
CASE 527AD
MG
1G
7A/A
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Publication Order Number:
DTC114ED/D
Free Datasheet http://www.datasheet4u.com/
1 page  
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
TYPICAL CHARACTERISTICS
NSBC114EDP6
1
IC/IB = 10
25C
0.1
−55C
150C
1000
VCE = 10 V
100
10
25C
150C
−55C
0.01
0
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
50
f = 10 kHz
IE = 0 A
TA = 25C
1
0.1
1 10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
150C
10
1
−55C
25C
100
10 20 30 40
VR, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
100
0.1
VO = 5 V
0.01
50 0 1 2 3 4 5 6 7
Vin, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
10
25C
−55C
1 150C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NSBC114EDP6.PDF ] | |
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