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PDF B621 Data sheet ( Hoja de datos )
| Número de pieza | B621 | |
| Descripción | PNP Transistor - 2SB621 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de B621 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Transistor
2SB621, 2SB621A
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD592 and 2SD592A
s Features
q Low collector to emitter saturation voltage VCE(sat).
q High transition frequency fT.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SB621
base voltage 2SB621A
Collector to 2SB621
emitter voltage 2SB621A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–5
–1.5
–1
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base 2SB621
voltage
2SB621A
Collector to emitter 2SB621
voltage
2SB621A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –500mA
VCE = –5V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min typ max Unit
– 0.1 µA
–30
V
–60
–25
V
–50
–5 V
85 340
50
– 0.2 –0.4
V
– 0.85 –1.2
V
200 MHz
20 30 pF
*hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
1
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet B621.PDF ] | |
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