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PDF NSB4904DW1T1G Data sheet ( Hoja de datos )
| Número de pieza | NSB4904DW1T1G | |
| Descripción | (NSB4904DW1T1G / NSB4904DW1T2G) Dual Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NSB4904DW1T1G,
NSB4904DW1T2G
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSB4904DW1T1G and
NSB4904DW1T2G, two complementary BRT devices are housed in
the SC−88/SOT−363 package which is ideal for low power surface
mount applications where board space is at a premium.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for
Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol Value
Unit
Collector-Base Voltage
VCBO 50 Vdc
Collector-Emitter Voltage
VCEO 50 Vdc
Collector Current
IC 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
6 54
R1 R2
Q1
R2 R1
Q2
12
3
1
SC−88/SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
6
RC MG
G
1
RC = Device Marking
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See specific ordering information in the ordering information
table on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 2
1
Publication Order Number:
NSB4904DW1T1G/D
Free Datasheet http://www.datasheet4u.com/
1 page  
NSB4904DW1T1G, NSB4904DW1T2G
TYPICAL ELECTRICAL CHARACTERISTICS − NSB4904DW1T1G, NSB4904DW1T2G PNP TRANSISTOR
1
IC/IB = 10
0.1
TA = -25°C
25°C
75°C
1000
100
TA = 75°C
25°C
-25°C
0.01
0
10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
40
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
1
f = 1 MHz
100
TA = 75°C
25°C
lE = 0 V
0.8
TA = 25°C
10
-25°C
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
00
0.001
10 20 30 40 50
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
TA = -25°C
25°C
10 75°C
1
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NSB4904DW1T1G.PDF ] | |
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