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NCN5150 PDF даташит

Спецификация NCN5150 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Wired M-BUS Slave Transceiver».

Детали детали

Номер произв NCN5150
Описание Wired M-BUS Slave Transceiver
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NCN5150 Даташит, Описание, Даташиты
NCN5150
Wired M-BUS Slave
Transceiver
Description
The NCN5150 is a single-chip integrated slave transceiver for use in
two-wire Meter Bus (M-BUS) slave devices and repeaters. The
transceiver provides all of the functions needed to satisfy the
European Standards EN 13757−2 and EN 1434−3 describing the
physical layer requirements for M-BUS. It includes a programmable
power level of up to 2 (SOIC version) or 6 (NQFP version) unit loads,
which are available for use in external circuits through a 3.3 V LDO
regulator.
The NCN5150 can provide communication up to the maximum
M-BUS communication speed of 38,400 baud (half-duplex).
Features
Single-chip MBUS Transceiver
UART Communication Speeds Up to 38,400 baud
Integrated 3.3 V VDD LDO Regulator with Extended Peak Current
Capability of 15 mA
Supports Powering Slave Device from the Bus or from External
Power Supply
Adjustable I/O Levels
Adjustable Constant Current Sink up to 2 or 6 Unit Loads Depending
on the Package
Low Bus Voltage Operation
Extended Current Budget for External Circuits: at least 0.88 mA
Polarity Independent
Power-Fail Function
Fast Startup − No External Transistor Required on STC Pin
Industrial Ambient Temperature Range of −40°C to +85°C
Available in:
16-pin SOIC (Pin-to-Pin Compatible with TSS721A)
20-pin QFN
These are Pb-free Devices
Typical Applications
Multi-energy Utility Meters
Water
Gas
Electricity
Heating systems
Related Standards − European Standard
EN 13757−2, EN 1434−3
For more information visit www.m-bus.com
www.onsemi.com
NQFP−20
MN SUFFIX
CASE 485E
SOIC−16
D SUFFIX
CASE 751B
MARKING DIAGRAMS
20
1
NCN
5150
ALYW
G
NQFP−20
16
NCN5150
ALYYWWG
1
SOIC−16
A = Assembly Location
L = Wafer Lot (optional)
Y, YY = Year
W, WW = Work Week
G or G = Pb-free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 3
1
Publication Order Number:
NCN5150/D









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NCN5150 Даташит, Описание, Даташиты
NCN5150
BUSL2 1
GND 1
BUSL1 2
BUSL2 3
VB 4
5
20 19 18 17 16
15
NCN5150
QFN20
14 VS
13 VIO
12 TX
11 TXI
6 7 8 9 10
VB 2
STC 3
RIDD 4
PFb 5
SC 6
TXI 7
TX 8
NCN5150
SOIC16
16 BUSL1
15 GND
14 RIS
13 RXI
12 RX
11 VDD
10 VS
9 VIO
Figure 1. Pin Out NCN5150 in 20-pin NQFP and 16 Pin SOIC (Top View)
Table 1. NCN5150 PINOUT
Signal Name
BUSL1
BUSL2
VB
STC
Type
Bus
Bus
Power
Output
Pin Number
NCN5150 SOIC
16
NCN5150 QFN
2
13
24
36
RIDD
Input
4
7
PFb Output
SC Output
5
6
8
9
TXI Output
TX Output
VIO Input
VS Output
7
8
9
10
11
12
13
14
VDD
Power
11
16
RX
RXI
RIS
GND
NC
EP
Input
Input
Input
Ground
NC
Ground
12 17
13 18
14 20
15 1
− 5, 10, 15, 19
− EP
Pin Description
MBUS line. Connect to bus through 220 W series resistors.
Connections are polarity independent
Rectified bus voltage
Storage capacitor pin. Connect to bulk storage capacitor
(minimum 10 mF, maximum 330 mF−2,700 mF − see Table 9)
Mark current adjustment pin.
Connect to programming resistor
Power Fail, active low
Mark bus voltage level storage capacitor pin.
Connect to ceramic capacitor (typically 220 nF)
UART Data output (inverted)
UART Data output
I/O pins (RX, RXI, TX, TXI, PFb) high level voltage
Gate driver for PMOS switch between bus powered operation
and external power supply
Voltage regulator output.
Connect to minimum 1 mF decoupling capacitor
UART Data input
UART Data input (inverted)
Modulation current adjustment pin
Ground
Not connected pins. Tie to GND
Exposed Pad. Tie to GND
www.onsemi.com
2









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NCN5150 Даташит, Описание, Даташиты
VIO
VB
RIDD
STC
VS
VDD
PFb
VIO
Buffer
VIO_BUF
Power
Fail
Detect
NCN5150
VB_INT
BUSL1
CS1
VS
Driver
STC
Voltage
Monitor
3.3 V
LDO
STC
Clamp
ECHO
CS_TX
Receiver
Transmitter
VIO_BUF
BUSL2
SC
TX
TXI
RXI
RX
POR
Thermal
Shutdown
NCN5150
GND
Figure 2. NCN5150 Block Diagram
RIS
Table 2. ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Min Max Unit
TJ Junction Temperature
−40 +150
°C
TS Storage Temperature
−55 +150
°C
VBUS
Bus Voltage (|BUSL1 − BUSL2|)
−50 50
V
VTX, VTXI Voltage on Pin TX, TXI
−0.3 7.5
V
VRX, VRXI, VIO Voltage on Pin RX, RXI, VIO
−0.3 5.5
V
ESDHBM
ESD Rating − Human Body Model
4.0 − kV
ESDMM
ESD Rating − Machine Model
250 −
V
ESDCDM ESD Rating − Charged Device Model
750 −
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. All voltages are referenced to GND.
www.onsemi.com
3










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