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NCP45520 PDF даташит

Спецификация NCP45520 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «(NCP45520 / NCP45521) Advanced Load Management».

Детали детали

Номер произв NCP45520
Описание (NCP45520 / NCP45521) Advanced Load Management
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NCP45520 Даташит, Описание, Даташиты
NCP45520, NCP45521
ecoSWITCHt
Advanced Load Management
Controlled Load Switch with Low RON
The NCP4552x series of load switches provide a component and
area-reducing solution for efficient power domain switching with
inrush current limit via soft start. In addition to integrated control
functionality with ultra low onresistance, these devices offer system
safeguards and monitoring via fault protection and power good
signaling. This cost effective solution is ideal for power management
and hot-swap applications requiring low power consumption in a
small footprint.
Features
Advanced Controller with Charge Pump
Integrated N-Channel MOSFET with Low RON
Input Voltage Range 0.5 V to 13.5 V
Soft-Start via Controlled Slew Rate
Adjustable Slew Rate Control (NCP45521)
Power Good Signal (NCP45520)
Thermal Shutdown
Undervoltage Lockout
Short-Circuit Protection
Extremely Low Standby Current
Load Bleed (Quick Discharge)
This is a PbFree Device
Typical Applications
Portable Electronics and Systems
Notebook and Tablet Computers
Telecom, Networking, Medical, and Industrial Equipment
SetTop Boxes, Servers, and Gateways
Hot Swap Devices and Peripheral Ports
VCC EN PG*
VIN
Bandgap
&
Biases
Control
Logic
Thermal,
Undervoltage
&
ShortCircuit
Protection
Charge
Pump
Delay and
Slew Rate
Control
SR*
GND
BLEED
VOUT
Figure 1. Block Diagram
(*Note: either PG or SR available for each part)
http://onsemi.com
RON TYP
9.5 mW
10.1 mW
12.8 mW
VCC
3.3 V
3.3 V
3.3 V
VIN
1.8 V
5.0 V
12 V
IMAX
10.5 A
1
DFN8, 2x2
CASE 506CC
MARKING DIAGRAM
1
XX MG
G
XX = PH for NCP45520H
= PL for NCP45520L
= SH for NCP45521H
= SL for NCP45521L
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
PIN CONFIGURATION
VIN 1
EN 2
VCC 3
GND 4
9: VIN
(Top View)
8 VOUT
7 VOUT
6 PG or SR
5 BLEED
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
January, 2013 Rev. 1
1
Publication Order Number:
NCP45520/D
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NCP45520 Даташит, Описание, Даташиты
NCP45520, NCP45521
Table 1. PIN DESCRIPTION
Pin Name
1, 9 VIN
2 EN
3 VCC
4 GND
5 BLEED
6 PG
SR
7, 8 VOUT
Function
Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 9
NCP45520H & NCP45521H Activehigh digital input used to turn on the MOSFET, pin
has an internal pull down resistor to GND
NCP45520L & NCP45521L Activelow digital input used to turn on the MOSFET, pin has
an internal pull up resistor to VCC
Supply voltage to controller (3.0 V 5.5 V)
Controller ground
Load bleed connection, must be tied to VOUT either directly or through a resistor 1 kW
NCP45520 Activehigh, opendrain output that indicates when the gate of the MOSFET is
fully charged, external pull up resistor 1 kW to an external voltage source required; tie to
GND if not used
NCP45521 Slew rate adjustment; float if not used
Source of MOSFET connected to load
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage Range
Input Voltage Range
Output Voltage Range
EN Digital Input Range
PG Output Voltage Range (Note 1)
Thermal Resistance, JunctiontoAmbient, Steady State (Note 2)
Thermal Resistance, JunctiontoAmbient, Steady State (Note 3)
Thermal Resistance, JunctiontoCase (VIN Paddle)
Continuous MOSFET Current @ TA = 25°C (Notes 2 and 4)
Continuous MOSFET Current @ TA = 25°C (Notes 3 and 4)
Total Power Dissipation @
Derate above TA = 25°C
TA
=
25°C
(Note
2)
VCC
VIN
VOUT
VEN
VPG
RθJA
RθJA
RθJC
IMAX
IMAX
PD
0.3 to 6
0.3 to 18
0.3 to 18
0.3 to (VCC + 0.3)
0.3 to 6
40.0
72.7
5.3
10.5
7.8
2.50
24.9
V
V
V
V
V
°C/W
°C/W
°C/W
A
A
W
mW/°C
Total Power Dissipation @ TA = 25°C (Note 3)
Derate above TA = 25°C
PD 1.37 W
13.8 mW/°C
Storage Temperature Range
Lead Temperature, Soldering (10 sec.)
ESD Capability, Human Body Model (Notes 5 and 6)
ESD Capability, Machine Model (Note 5)
ESD Capability, Charged Device Model (Note 5)
Latchup Current Immunity (Notes 5 and 6)
TSTG
TSLD
ESDHBM
ESDMM
ESDCDM
LU
40 to 150
260
3.0
200
1.0
100
°C
°C
kV
V
kV
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. NCP45520 only. PG is an opendrain output that requires an external pull up resistor 1 kW to an external voltage source.
2. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
3. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
4. Ensure that the expected operating MOSFET current will not cause the ShortCircuit Protection to turn the MOSFET off undesirably.
5. Tested by the following methods @ TA = 25°C:
ESD Human Body Model tested per JESD22A114
ESD Machine Model tested per JESD22A115
ESD Charged Device Model tested per JESD22C101
Latchup Current tested per JESD78
6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance
for VIN and VOUT should be expected and these devices should be treated as ESD sensitive.
http://onsemi.com
2
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NCP45520 Даташит, Описание, Даташиты
NCP45520, NCP45521
Table 3. OPERATING RANGES
Rating
Supply Voltage
Input Voltage
Ground
Ambient Temperature
Junction Temperature
Symbol
VCC
VIN
GND
TA
TJ
Min
3
0.5
40
40
Max Unit
5.5 V
13.5 V
0V
85 °C
125 °C
Table 4. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Conditions (Note 7)
Symbol Min Typ Max Unit
MOSFET
OnResistance
VCC = 3.3 V; VIN = 1.8 V
RON
9.5 12.7 mW
VCC = 3.3 V; VIN = 5 V
10.1 13.9
VCC = 3.3 V; VIN = 12 V
12.8 22.5
Leakage Current (Note 8)
CONTROLLER
VEN = 0 V; VIN = 13.5 V
ILEAK
0.1 1 mA
Supply Standby Current (Note 9)
VEN = 0 V; VCC = 3 V
ISTBY
0.65 2
mA
VEN = 0 V; VCC = 5.5 V
3.2 4.5
Supply Dynamic Current (Note 10)
VEN = VCC = 3 V; VIN = 12 V
IDYN
280 400
mA
VEN = VCC = 5.5 V; VIN = 1.8 V
530 750
Bleed Resistance
VEN = 0 V; VCC = 3 V
RBLEED
86
115 144
W
VEN = 0 V; VCC = 5.5 V
72 97 121
Bleed Pin Leakage Current
VEN = VCC = 3 V, VIN = 1.8 V
IBLEED
6 10 mA
VEN = VCC = 3 V, VIN = 12 V
60 70
EN Input High Voltage
VCC = 3 V 5.5 V
VIH 2
V
EN Input Low Voltage
VCC = 3 V 5.5 V
VIL 0.8 V
EN Input Leakage Current
NCP45520H; NCP45521H; VEN = 0 V
IIL
90 500 nA
NCP45520L; NCP45521L; VEN = 5.5 V
IIH
90 500
EN Pull Down Resistance
NCP45520H; NCP45521H
RPD 76 100 124 kW
EN Pull Up Resistance
NCP45520L; NCP45521L
RPU 76 100 124 kW
PG Output Low Voltage (Note 11)
NCP45520; VCC = 3 V; ISINK = 5 mA
VOL
0.2 V
PG Output Leakage Current (Note 12)
NCP45520; VCC = 3 V; VTERM = 3.3 V
IOH
5 100 nA
Slew Rate Control Constant (Note 13)
FAULT PROTECTIONS
NCP45521; VCC = 3 V
KSR 24 31 38 mA
Thermal Shutdown Threshold (Note 14)
VCC = 3 V 5.5 V
TSDT
145
°C
Thermal Shutdown Hysteresis (Note 14)
VCC = 3 V 5.5 V
THYS
20
°C
VIN Undervoltage Lockout Threshold
VCC = 3 V
VUVLO 0.25
0.35
0.45
V
VIN Undervoltage Lockout Hysteresis
VCC = 3 V
VHYS
20
50
70 mV
ShortCircuit Protection Threshold
VCC = 3 V; VIN = 0.5 V
VSC 200 265 350 mV
VCC = 3 V; VIN = 13.5 V
100 285 500
7. VEN shown only for NCP45520H, NCP45521H (EN ActiveHigh) unless otherwise specified.
8. Average current from VIN to VOUT with MOSFET turned off.
9. Average current from VCC to GND with MOSFET turned off.
10. Average current from VCC to GND after charge up time of MOSFET.
11. PG is an open-drain output that is pulled low when the MOSFET is disabled.
12. PG is an open-drain output that is not driven when the gate of the MOSFET is fully charged, requires an external pull up resistor 1 kW to
an external voltage source, VTERM.
13. See Applications Information section for details on how to adjust the slew rate.
14. Operation above TJ = 125°C is not guaranteed.
http://onsemi.com
3
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