NTMFS5834NL PDF даташит
Спецификация NTMFS5834NL изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTMFS5834NL |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NTMFS5834NL,
NVMFS5834NL
Power MOSFET
40 V, 75 A, 9.3 mW, Single N−Channel
Features
• Low RDS(on)
• Low Capacitance
• Optimized Gate Charge
• NVMF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
40
±20
14
12
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TA = 25°C
TA = 100°C
TC = 25°C
TC = 100°C
PD
ID
3.6
2.5
75
63
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TC = 100°C
tp = 10 ms
PD
IDM
107
75
276
Unit
V
V
A
W
A
W
A
Operating Junction and Storage
Temperature
TJ, TSTG −55 to
+175
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
IS
EAS
IAS
75 A
48 mJ
31 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Bottom) (Note 1)
Junction−to−Case (Top) (Note 1)
Junction−to−Ambient Steady State
(Note 1)
RqJC
RqJC
RqJA
1.4
4.5
41 °C/W
Junction−to−Ambient Steady State
(Note 2)
RqJA
75
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
9.3 mW @ 10 V
13.6 mW @ 4.5 V
ID MAX
75 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 5834L
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS5834NLT1G DFN5 1500/Tape & Reel
(Pb−Free)
NVMFS5834NLT1G DFN5 1500/Tape & Reel
(Pb−Free)
NVMFS5834NLT3G DFN5 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 2
1
Publication Order Number:
NTMFS5834NL/D
Free Datasheet http://www.datasheet4u.com/
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NTMFS5834NL, NVMFS5834NL
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/
TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VVDGSS
=
=
0 V,
40 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 20 A
VGS = 4.5 V
ID = 20 A
VDS = 5 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TOT)
QG(TH)
QGS
QGD
VGP
RG
VGS = 0 V, f = 1 MHz, VDS = 20 V
VGS = 10 V, VDS = 20 V; ID = 20 A
VGS = 4.5 V, VDS = 20 V; ID = 20 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 20 V,
ID = 20 A, RG = 2.5 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 20 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta
tb
VGS
=
0
V, dIS/dt
IS = 20
=
A
100
A/ms,
Reverse Recovery Charge
QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
40
1.0
Typ Max Unit
V
34.7 mV/°C
1.0
100
±100
mA
nA
3.0 V
5.7 mV/°C
7.1 9.3
11.3 13.6
mW
29 S
1231
198
141
24
12
1.0
4.2
6.3
3.4
0.7
pF
nC
V
W
10
56.4
ns
17.4
6.6
0.84 1.2
0.72
18
10
8.0
108
V
ns
nC
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
NTMFS5834NL, NVMFS5834NL
TYPICAL CHARACTERISTICS
150
10 V
125
100
TJ = 25°C
5.0 V
4.5 V
75 4.0 V
50
3.5 V
25
3.0 V
0
012345
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
150
VDS ≥ 10 V
125
100
75
50 TJ = 25°C
25
TJ = 125°C
0
23
TJ = −55°C
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.050
0.040
0.030
0.020
ID = 20 A
TJ = 25°C
0.020
0.018
0.016
0.014
0.012
0.010
TJ = 25°C
VGS = 4.5 V
0.010
0.008
0.006
VGS = 10 V
0.000
2 4 6 8 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.004
5
15 25 35 45 55 65 75
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
VGS = 10 V
1.8 ID = 20 A
10,000
VGS = 0 V
1.6
1.4 TJ = 150°C
1,000
1.2
1.0
TJ = 125°C
0.8
0.6
−50 −25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
10 20 30 40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
Free Datasheet http://www.datasheet4u.com/
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NTMFS5834NL | Power MOSFET ( Transistor ) | ON Semiconductor |
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