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NTST30120CT PDF даташит

Спецификация NTST30120CT изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Very Low Forward Voltage Trench-based Schottky Rectifier».

Детали детали

Номер произв NTST30120CT
Описание Very Low Forward Voltage Trench-based Schottky Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTST30120CT Даташит, Описание, Даташиты
NTST30120CT,
NTSJ30120CTG,
NTSB30120CT-1G,
NTSB30120CTG,
NTSB30120CTT4G
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.50 V at IF = 5 A
Features
Fine Lithography Trenchbased Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
PbFree and HalideFree Packages are Available
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DCDC Converters
Freewheeling and ORing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 940 @ 0.125 in
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
http://onsemi.com
VERY LOW FORWARD
VOLTAGE, LOW LEAKAGE
SCHOTTKY BARRIER
RECTIFIERS 30 AMPERES,
120 VOLTS
PIN CONNECTIONS
1
2, 4
3
44
1 23
TO220AB
CASE 221A
STYLE 6
4
1 23
I2PAK
CASE 418D
STYLE 3
1 23
TO220FP
CASE 221AH
D2PAK
CASE 418B
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
January, 2013 Rev. 4
1
Publication Order Number:
NTST30120CT/D
Free Datasheet http://www.datasheet4u.com/









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NTST30120CT Даташит, Описание, Даташиты
NTST30120CT, NTSJ30120CTG, NTSB30120CT1G, NTSB30120CTG,
NTSB30120CTT4G
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 125°C)
Rating
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 130°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Symbol
Per device
Per diode
VRRM
VRWM
VR
IF(AV)
Per device
Per diode
IFRM
IFSM
Value
120
30
15
60
30
150
Unit
V
A
A
A
Operating Junction Temperature
TJ
40 to +150
°C
Storage Temperature
Tstg 40 to +150 °C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Maximum Thermal Resistance per Diode
JunctiontoCase
JunctiontoAmbient
RRqqJJCA
NTST30120CTG
NTSB30120CT1G
2.5
70
NTSB30120CTG
1.14
46.6
NTSJ30120CTG
4.05
105
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 7.5 A, TJ = 25°C)
(IF = 15 A, TJ = 25°C)
(IF = 5 A, TJ = 125°C)
(IF = 7.5 A, TJ = 125°C)
(IF = 15 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(VR = 90 V, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
Symbol
vF
IR
Typ
0.56
0.71
0.90
0.50
0.60
0.68
16
11
25
Max Unit
V
1.08
0.76
mA
mA
800 mA
100 mA
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

NTST30120CT Даташит, Описание, Даташиты
NTST30120CT, NTSJ30120CTG, NTSB30120CT1G, NTSB30120CTG,
NTSB30120CTT4G
TYPICAL CHARACTERISITICS
100
TA = 150°C
10 TA = 125°C
TA = 25°C
100
TA = 150°C
10
TA = 125°C
1.0
1.0
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
vF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
0.1
0.01 TA = 25°C
0.001
20
30 40 50 60 70 80 90 100 110
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 2. Typical Reverse Current
Characteristics
120
10000
1000
TJ = 25°C
100
10
0.1 1 10 100
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Junction Capacitance
30
25 dc
RqJC = 1.3°C/W
20
15 SQUARE WAVE
10
5
0
0 20 40 60 80 100 120 140
TC, CASE TEMPERATURE (°C)
Figure 4. Current Derating per Leg
60
55
50 dc
RqJC = 1.3°C/W
45
40
35
30 SQUARE WAVE
25
20
15
10
5
0
0 20 40 60 80 100 120 140
TC, CASE TEMPERATURE (°C)
Figure 5. Current Derating
30
IPK/IAV = 20
25
IPK/IAV = 10
IPK/IAV = 5
20 SQUARE
WAVE
15
dc
10
5
0 TJ = 150°C
0 2 4 6 8 10 12 14 16 18 20
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
http://onsemi.com
3
Free Datasheet http://www.datasheet4u.com/










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Номер в каталогеОписаниеПроизводители
NTST30120CTVery Low Forward Voltage Trench-based Schottky RectifierON Semiconductor
ON Semiconductor

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