PDF NE5550234 Data sheet ( Hoja de datos )

Número de pieza	NE5550234
Descripción	Silicon Power MOS FET
Fabricantes	Renesas
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No Preview Available ! NE5550234 Silicon Power MOS FET Data Sheet R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm) • High ESD tolerance • Suitable for VHF to UHF-BAND Class-AB power amplifier. APPLICATIONS • 150 MHz Band Radio System • 460 MHz Band Radio System • 900 MHz Band Radio System ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form NE5550234 NE5550234-T1 NE5550234-AZ NE5550234-T1-AZ 3-pin power minimold (34 PKG) (Pb-Free) V5 • 12 mm wide embossed taping • Gate pin faces the perforation side of the tape • 12 mm wide embossed taping • Gate pin faces the perforation side of the tape • Qty 1 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5550234 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current (50% Duty Pulsed) Total Power Dissipation Note Channel Temperature Storage Temperature Note: Value at TC = 25°C Symbol VDS VGS IDS IDS-pulse Ptot Tch Tstg Ratings 30 6.0 0.6 1.2 12.5 150 −65 to +150 Unit V V A A W °C °C CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 1 of 14 Free Datasheet http://www.datasheet4u.com/ 1 page NE5550234 TEST CIRCUIT SCHEMATIC FOR 157 MHz VGS VDS IN 50 Ω C10 C11 R1 C1 L1 C2 L10 R10 NE5550234 L11 C22 C20 C21 OUT 50 Ω COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Symbol C10 C11 C20 C21 C22 C1 C2 L10 L11 L1 <R> R10 R1 <R> PCB SMA Connecter Value 27 pF 6.8 pF 8.2 pF 27 pF 100 pF 1 μF 1 μF 100 nH 47 nH 74 nH 5.6 Ω 4.7 kΩ − − Type GQM1882C1H270JB01 GQM1882C1H6R8DB01 GQM1882C1H8R2DB01 GQM1882C1H270JB01 GQM1882C1H101JB01 GRM21BB31H105KA2L GRM21BB31H105KA2L LL1608-FSLR10J D20-47N2 D20-74N7 MCR03J5R6 MCR03J472 R1766, t = 0.8 mm, εr = 4.8, size = 30 × 40 mm WAKA 01K0790-20 Maker Murata Murata Murata Murata Murata Murata Murata Toko Ohesangyou Ohesangyou Rohm Rohm Panasonic WAKA R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 5 of 14 Free Datasheet http://www.datasheet4u.com/ 5 Page NE5550234 S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 11 of 14 Free Datasheet http://www.datasheet4u.com/ 11 Page

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