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NVMFS5826NL PDF даташит

Спецификация NVMFS5826NL изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVMFS5826NL
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVMFS5826NL Даташит, Описание, Даташиты
NVMFS5826NL
Power MOSFET
60 V, 24 mW, 26 A, Single NChannel
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5826NLWF Wettable Flanks Product
AECQ101 Qualified and PPAP Capable
These are PbFree Devices and RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) Jmb (Notes 1,
Power Dissipation
RYJmb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
rent
4)
RqJA
(Notes
1,
3,
Power Dissipation
RqJA (Notes 1 & 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
±20
26
19
39
19
8.0
6.0
3.6
1.8
130
55 to
+ 175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 32 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL(pk) = 20 A, L = 0.1 mH, RG = 25 W)
EAS 20 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoMounting Board (top) Steady
State (Notes 2, 3)
RYJmb
3.9 °C/W
JunctiontoAmbient Steady State (Note 3)
RqJA
42
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
24 mW @ 10 V
32 mW @ 4.5 V
ID MAX
26 A
D (5,6)
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
DFN5
(SO8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 3
1
Publication Order Number:
NVMFS5826NL/D
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NVMFS5826NL Даташит, Описание, Даташиты
NVMFS5826NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ± 20 V
Gate Threshold Voltage
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 5 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1 MHz,
VDS = 25 V
VGS = 4.5 V, VDS = 48 V, ID = 10 A
VGS = 10 V, VDS = 48 V, ID = 10 A
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 48 V,
ID = 10 A, RG = 2.5 W
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 10 A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 10 A
Reverse Recovery Charge
QRR
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min
60
1.5
Typ Max Unit
1.0
10
±100
V
mA
nA
2.5 V
18 24 mW
24 32
8.0 S
850 pF
85
50
9.1
1.0
nC
3.0
4.0
17 nC
9.0
32
15 ns
24
0.8 1.2 V
0.7
15
11 ns
4.0
11 nC
http://onsemi.com
2
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NVMFS5826NL Даташит, Описание, Даташиты
NVMFS5826NL
TYPICAL CHARACTERISTICS
60
TJ = 25°C
50
40
10 V
4.5 V
4.0 V
30
3.5 V
20
10 VGS = 3.0 V
0
012345
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
40
VDS 10 V
30
20
TJ = 25°C
10
TJ = 125°C
0 TJ = 55°C
12 3 4
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.050
0.040
0.030
0.020
ID = 10 A
TJ = 25°C
0.040
TJ = 25°C
0.030
0.020
VGS = 4.5 V
VGS = 10 V
5
0.010
2 4 6 8 10
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
0.010
5
10 15 20 25 30 35 40 45
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
2.4
2.2
VGS = 10 V
ID = 10 A
2.0
10000
VGS = 0 V
1.8 TJ = 150°C
1.6
1000
1.4
1.2 TJ = 125°C
1.0
0.8
0.6 100
50 25 0 25 50 75 100 125 150 175
10
20
30
40
50
60
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
http://onsemi.com
3
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Номер в каталогеОписаниеПроизводители
NVMFS5826NLPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

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