NVMFS5826NL PDF даташит
Спецификация NVMFS5826NL изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NVMFS5826NL |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NVMFS5826NL
Power MOSFET
60 V, 24 mW, 26 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVMFS5826NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free Devices and RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) J−mb (Notes 1,
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
rent
4)
RqJA
(Notes
1,
3,
Power Dissipation
RqJA (Notes 1 & 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
±20
26
19
39
19
8.0
6.0
3.6
1.8
130
−55 to
+ 175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 32 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL(pk) = 20 A, L = 0.1 mH, RG = 25 W)
EAS 20 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
RYJ−mb
3.9 °C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
42
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
24 mW @ 10 V
32 mW @ 4.5 V
ID MAX
26 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 3
1
Publication Order Number:
NVMFS5826NL/D
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NVMFS5826NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ± 20 V
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 5 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1 MHz,
VDS = 25 V
VGS = 4.5 V, VDS = 48 V, ID = 10 A
VGS = 10 V, VDS = 48 V, ID = 10 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 48 V,
ID = 10 A, RG = 2.5 W
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 10 A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 10 A
Reverse Recovery Charge
QRR
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min
60
1.5
Typ Max Unit
1.0
10
±100
V
mA
nA
2.5 V
18 24 mW
24 32
8.0 S
850 pF
85
50
9.1
1.0
nC
3.0
4.0
17 nC
9.0
32
15 ns
24
0.8 1.2 V
0.7
15
11 ns
4.0
11 nC
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NVMFS5826NL
TYPICAL CHARACTERISTICS
60
TJ = 25°C
50
40
10 V
4.5 V
4.0 V
30
3.5 V
20
10 VGS = 3.0 V
0
012345
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
40
VDS ≥ 10 V
30
20
TJ = 25°C
10
TJ = 125°C
0 TJ = −55°C
12 3 4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.050
0.040
0.030
0.020
ID = 10 A
TJ = 25°C
0.040
TJ = 25°C
0.030
0.020
VGS = 4.5 V
VGS = 10 V
5
0.010
2 4 6 8 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.010
5
10 15 20 25 30 35 40 45
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.4
2.2
VGS = 10 V
ID = 10 A
2.0
10000
VGS = 0 V
1.8 TJ = 150°C
1.6
1000
1.4
1.2 TJ = 125°C
1.0
0.8
0.6 100
−50 −25 0 25 50 75 100 125 150 175
10
20
30
40
50
60
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
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NVMFS5826NL | Power MOSFET ( Transistor ) | ON Semiconductor |
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