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Datasheet NVMD4N03 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NVMD4N03Power MOSFET, Transistor

NTMD4N03, NVMD4N03 Power MOSFET Features 4 A, 30 V, N−Channel SO−8 Dual • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.048 W, VGS = 10 V (Typ) − RDS(on) = 0.065 W, VGS = 4
ON Semiconductor
ON Semiconductor		mosfet


NVM Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NVM30604096-Bit EEPROM

NVM 3060 4096-Bit EEPROM Edition Feb. 14, 1990 6251-309-2/E ITT Semiconductors NVM 3060 Contents Page 3 4 4 4 4 5 5 5 5 7 8 8 8 8 8 9 9 9 9 10 Section 1. 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.5.1. 2.5.2. 2.5.3. 3. 3.1. 3.2. 3.3. 3.4. 4. 4.1. 4.2. 4.3. 5. Title Introduction Specifications Outline Dimensio
ETC
ETC		data
2NVMD4N03Power MOSFET, Transistor

NTMD4N03, NVMD4N03 Power MOSFET Features 4 A, 30 V, N−Channel SO−8 Dual • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.048 W, VGS = 10 V (Typ) − RDS(on) = 0.065 W, VGS = 4
ON Semiconductor
ON Semiconductor		mosfet
3NVMD6N03R2Power MOSFET, Transistor

NTMD6N03R2, NVMD6N03R2 Power MOSFET 30 V, 6 A, Dual N-Channel SOIC-8 Features http://onsemi.com VDSS 30 V RDS(ON) Typ 24 mΩ @ VGS = 10 V ID Max 6.0 A  Designed for use in low voltage, high speed switching applications  Ultra Low On--Resistance Provides Higher Efficiency and Extends Battery L
ON Semiconductor
ON Semiconductor		mosfet
4NVMD6N04Power MOSFET, Transistor

NTMD6N04, NVMD6N04 Power MOSFET 40 V, 5.8 A, Dual N−Channel SOIC−8 Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RDS(on) = 0.034 W, VGS
ON Semiconductor
ON Semiconductor		mosfet
5NVMD6N04R2GPower MOSFET, Transistor

NTMD6N04, NVMD6N04 Power MOSFET 40 V, 5.8 A, Dual N−Channel SOIC−8 Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RDS(on) = 0.034 W, VGS
ON Semiconductor
ON Semiconductor		mosfet
6NVMD6P02Power MOSFET, Transistor

NTMD6P02, NVMD6P02 Power MOSFET 6 A, 20 V, P−Channel SOIC−8, Dual Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Miniature Dual SOIC−8 Surface Mount Package • Diode Exhibits High Speed, Soft Recovery • Avalanche Energy Specified
ON Semiconductor
ON Semiconductor		mosfet
7NVMFD5483NLPower MOSFET, Transistor

NVMFD5483NL Power MOSFET 60 V, 36 mW, 24 A, Dual N−Channel Features • Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • 175°C Operating Temperature • NVMFD5483NLWF − Wettable Flank Option for Enhance
ON Semiconductor
ON Semiconductor		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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