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What is NVMFD5873NLWF?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "Power MOSFET ( Transistor )".


NVMFD5873NLWF Datasheet PDF - ON Semiconductor

Part Number NVMFD5873NLWF
Description Power MOSFET ( Transistor )
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


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NVMFD5873NL,
NVMFD5873NLWF
Power MOSFET
60 V, 13 mW, 58 A, Dual NChannel Logic
Level, Dual SO8FL
Features
Small Footprint (5x6 mm) for Compact Designs
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVMFD5873NLWF Wettable Flanks Product
AECQ101 Qualified and PPAP Capable
This is a PbFree Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) Jmb (Notes 1,
Power Dissipation
RYJmb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
rent
& 4)
RqJA
(Notes
1,
3
Power Dissipation
RqJA (Notes 1 & 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
"20
58
41
107
54
10
7.0
3.1
1.6
190
55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 28.3 A,
L = 0.1 mH, RG = 25 W)
IS
EAS
58 A
40 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctiontoMounting Board (top) Steady
State (Notes 2, 3)
RYJmb
1.4
°C/W
JunctiontoAmbient Steady State (Note 3)
RqJA
48
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second are higher but are dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
13 mW @ 10 V
16.5 mW @ 4.5 V
ID MAX
58 A
Dual NChannel
D1
D2
G1 G2
S1 S2
1
DFN8 5x6
(SO8FL)
CASE 506BT
MARKING DIAGRAM
D1 D1
S1
G1 5873xx
S2 AYWZZ
G2
D2 D2
D1
D1
D2
D2
5873NL = Specific Device Code
for NVMFD5873NL
5873LW = Specific Device Code
for NVMFD5873NLWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package Shipping
NVMFD5873NLT1G
DFN8 1500 / Tape &
(PbFree)
Reel
NVMFD5873NLWFT1G DFN8 1500 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
April, 2013 Rev. 2
1
Publication Order Number:
NVMFD5873NL/D
Free Datasheet http://www.datasheet4u.com/

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NVMFD5873NLWF equivalent
NVMFD5873NL, NVMFD5873NLWF
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10
20%
10%
5%
1 2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 12. Thermal Response
1
10
100 1000
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/


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Featured Datasheets

Part NumberDescriptionMFRS
NVMFD5873NLWFThe function is Power MOSFET ( Transistor ). ON SemiconductorON Semiconductor

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