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NTLUS3A40PZ PDF даташит

Спецификация NTLUS3A40PZ изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTLUS3A40PZ
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTLUS3A40PZ Даташит, Описание, Даташиты
NTLUS3A40PZ
Power MOSFET
20 V, 9.4 A, mCoolt Single PChannel,
ESD, 2.0x2.0x0.55 mm UDFN Package
Features
UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving
Lowest RDS(on) in 2.0x2.0 Package
ESD Protected
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
High Side Load Switch
PA Switch and Battery Switch
Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipa-
tion (Note 1)
t5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
20
±8.0
6.4
4.6
9.4
1.7
V
V
A
W
Continuous Drain
Current (Note 2)
t5s
Steady
State
Power Dissipation (Note 2)
Pulsed Drain Current
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
tp = 10 ms
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
ID
PD
IDM
TJ,
TSTG
IS
TL
3.8
4.0
2.9
0.7
30
-55 to
150
1.0
260
A
W
A
°C
A
°C
ESD Rating (HBM) per JESD22A114F
ESD
>2000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
http://onsemi.com
V(BR)DSS
20 V
MOSFET
RDS(on) MAX
29 mW @ 4.5 V
39 mW @ 2.5 V
60 mW @ 1.8 V
120 mW @ 1.5 V
ID MAX
9.4 A
S
G
D
PChannel MOSFET
MARKING
DIAGRAM
6 UDFN6
CASE 517BG
1
AA MG
1 mCOOLt G
AA = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
July, 2011 Rev. 3
1
Publication Order Number:
NTLUS3A40PZ/D
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NTLUS3A40PZ Даташит, Описание, Даташиты
NTLUS3A40PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Symbol
RθJA
RθJA
RθJA
Max Units
72 °C/W
33
189
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
ID = 250 mA, ref to 25°C
20
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 20 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 4.5 V, ID = 6.4 A
VGS = 2.5 V, ID = 4.8 A
VGS = 1.8 V, ID = 2.5 A
VGS = 1.5 V, ID = 1.5 A
VDS = 15 V, ID = 4.0 A
0.4
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
VGS = 0 V, f = 1 MHz,
VDS = 15 V
VGS = 4ID.5=V, 4V.D0SA= 15 V;
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDD = 15 V,
ID = 4.0 A, RG = 1 W
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 1.0 A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dis/dt = 100 A/ms,
tb IS = 1.0 A
Reverse Recovery Charge
QRR
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.
5. Pulse Test: pulse width 300 ms, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
Typ
5.0
3.0
23
31
43
60
18
2600
200
190
29
1.4
3.7
8.1
9.0
18
126
71
0.65
0.55
25
10
15
13.6
Max
1.0
10
±10
1.0
29
39
60
120
1.0
Units
V
mV/°C
mA
mA
V
mV/°C
mW
S
pF
nC
ns
V
ns
nC
http://onsemi.com
2
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NTLUS3A40PZ Даташит, Описание, Даташиты
NTLUS3A40PZ
TYPICAL CHARACTERISTICS
20 2.0 V
18 2.5 V
16 3.0 V
14 3.5 V
12 4.0 V
10 VGS = 4.5 V
1.8 V
8 1.6 V
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
20
18 VDS 10 V
16
14
12
10
8
6 TJ = 25°C
4
2
TJ = 125°C
TJ = 55°C
0
0 0.5 1.0 1.5 2.0 2.5
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3.0
0.20
0.18
0.16
TJ = 25°C
ID = 4.0 A
0.080
0.070
1.5 V
1.8 V
TJ = 25°C
0.14 0.060
0.12
0.10 0.050
0.08
0.06
0.040
2.5 V
0.04
0.02
0.030
VGS = 4.5 V
0.00 0.020
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0 2 4 6 8 10 12 14 16 18 20
VGS, GATE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.6
1.5
VGS = 4.5 V
ID = 4.0 A
1.4
100,000
1.3 10,000
1.2 TJ = 125°C
1.1
1.0 1000
TJ = 85°C
0.9
0.8
0.7 100
50 25 0 25 50 75 100 125 150
2 4 6 8 10 12 14 16 18 20
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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NTLUS3A40PZPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

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