NTLUS3A40PZ PDF даташит
Спецификация NTLUS3A40PZ изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTLUS3A40PZ |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NTLUS3A40PZ
Power MOSFET
−20 V, −9.4 A, mCoolt Single P−Channel,
ESD, 2.0x2.0x0.55 mm UDFN Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
• Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving
• Lowest RDS(on) in 2.0x2.0 Package
• ESD Protected
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Load Switch
• PA Switch and Battery Switch
• Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipa-
tion (Note 1)
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−20
±8.0
−6.4
−4.6
−9.4
1.7
V
V
A
W
Continuous Drain
Current (Note 2)
t≤5s
Steady
State
Power Dissipation (Note 2)
Pulsed Drain Current
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
tp = 10 ms
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
ID
PD
IDM
TJ,
TSTG
IS
TL
3.8
−4.0
−2.9
0.7
−30
-55 to
150
−1.0
260
A
W
A
°C
A
°C
ESD Rating (HBM) per JESD22−A114F
ESD
>2000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
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V(BR)DSS
−20 V
MOSFET
RDS(on) MAX
29 mW @ −4.5 V
39 mW @ −2.5 V
60 mW @ −1.8 V
120 mW @ −1.5 V
ID MAX
−9.4 A
S
G
D
P−Channel MOSFET
MARKING
DIAGRAM
6 UDFN6
CASE 517BG
1
AA MG
1 mCOOLt G
AA = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
July, 2011 − Rev. 3
1
Publication Order Number:
NTLUS3A40PZ/D
Free Datasheet http://www.datasheet4u.com/
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NTLUS3A40PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Symbol
RθJA
RθJA
RθJA
Max Units
72 °C/W
33
189
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = −250 mA
ID = −250 mA, ref to 25°C
−20
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = −20 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = −250 mA
VGS = −4.5 V, ID = −6.4 A
VGS = −2.5 V, ID = −4.8 A
VGS = −1.8 V, ID = −2.5 A
VGS = −1.5 V, ID = −1.5 A
VDS = −15 V, ID = −4.0 A
−0.4
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
VGS = 0 V, f = 1 MHz,
VDS = −15 V
VGS = −4ID.5=V−, 4V.D0SA= −15 V;
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS = −4.5 V, VDD = −15 V,
ID = −4.0 A, RG = 1 W
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −1.0 A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dis/dt = 100 A/ms,
tb IS = −1.0 A
Reverse Recovery Charge
QRR
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Typ
−5.0
3.0
23
31
43
60
18
2600
200
190
29
1.4
3.7
8.1
9.0
18
126
71
0.65
0.55
25
10
15
13.6
Max
−1.0
−10
±10
−1.0
29
39
60
120
1.0
Units
V
mV/°C
mA
mA
V
mV/°C
mW
S
pF
nC
ns
V
ns
nC
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2
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NTLUS3A40PZ
TYPICAL CHARACTERISTICS
20 −2.0 V
18 −2.5 V
16 −3.0 V
14 −3.5 V
12 −4.0 V
10 VGS = −4.5 V
−1.8 V
8 −1.6 V
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
20
18 VDS ≤ −10 V
16
14
12
10
8
6 TJ = 25°C
4
2
TJ = 125°C
TJ = −55°C
0
0 0.5 1.0 1.5 2.0 2.5
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3.0
0.20
0.18
0.16
TJ = 25°C
ID = −4.0 A
0.080
0.070
−1.5 V
−1.8 V
TJ = 25°C
0.14 0.060
0.12
0.10 0.050
0.08
0.06
0.040
−2.5 V
0.04
0.02
0.030
VGS = −4.5 V
0.00 0.020
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0 2 4 6 8 10 12 14 16 18 20
−VGS, GATE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
−ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1.5
VGS = −4.5 V
ID = −4.0 A
1.4
100,000
1.3 10,000
1.2 TJ = 125°C
1.1
1.0 1000
TJ = 85°C
0.9
0.8
0.7 100
−50 −25 0 25 50 75 100 125 150
2 4 6 8 10 12 14 16 18 20
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTLUS3A40PZ | Power MOSFET ( Transistor ) | ON Semiconductor |
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