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NSS40300MDR2G PDF даташит

Спецификация NSS40300MDR2G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «PNP Transistor».

Детали детали

Номер произв NSS40300MDR2G
Описание PNP Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSS40300MDR2G Даташит, Описание, Даташиты
NSS40300MDR2G
Dual Matched 40 V, 6.0 A,
Low VCE(sat) PNP Transistor
These transistors are part of the ON Semiconductor e2PowerEdge
family of Low VCE(sat) transistors. They are assembled to create a pair
of devices highly matched in all parameters, including ultra low
saturation voltage VCE(sat), high current gain and Base/Emitter turn on
voltage.
Typical applications are current mirrors, differential amplifiers,
DCDC converters and power management in portable and battery
powered products such as cellular and cordless phones, PDAs,
computers, printers, digital cameras and MP3 players. Other
applications are low voltage motor controls in mass storage products
such as disc drives and tape drives. In the automotive industry they can
be used in air bag deployment and in the instrument cluster. The high
current gain allows e2PowerEdge devices to be driven directly from
PMU’s control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.
Features
Current Gain Matching to 10%
Base Emitter Voltage Matched to 2 mV
This is a PbFree Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Collector Current Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
40 Vdc
40 Vdc
7.0 Vdc
3.0 A
6.0 A
HBM Class 3B
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 VOLTS
6.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
COLLECTOR
7,8
COLLECTOR
5,6
1
BASE
3
BASE
2
EMITTER
4
EMITTER
8
1
SOIC8
CASE 751
STYLE 29
DEVICE MARKING
8
P40300
AYWWG
G
1
P40300 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
© Semiconductor Components Industries, LLC, 2008
May, 2008 Rev. 1
ORDERING INFORMATION
Device
Package Shipping
NSS40300MDR2G
SOIC8
2500 /
(PbFree) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
NSS40300MD/D
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NSS40300MDR2G Даташит, Описание, Даташиты
NSS40300MDR2G
THERMAL CHARACTERISTICS
Characteristic
Symbol
SINGLE HEATED
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance, JunctiontoAmbient (Note 1)
Total Device Dissipation (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, JunctiontoAmbient (Note 2)
DUAL HEATED (Note 3)
RqJA
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance, JunctiontoAmbient (Note 1)
Total Device Dissipation (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, JunctiontoAmbient (Note 2)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR4 @ 10 mm2, 1 oz. copper traces, still air.
2. FR4 @ 100 mm2, 1 oz. copper traces, still air.
3. Dual heated values assume total power is the sum of two equally powered devices.
Max
576
4.6
217
676
5.4
185
653
5.2
191
783
6.3
160
55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
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NSS40300MDR2G Даташит, Описание, Даташиты
NSS40300MDR2G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CEO
V(BR)CBO
40
40
Vdc
Vdc
Emitter Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
7.0
Vdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc)
ON CHARACTERISTICS
ICBO
mAdc
− − −0.1
IEBO
mAdc
− − −0.1
DC Current Gain (Note 4)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V) (Note 5)
Collector Emitter Saturation Voltage (Note 4)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.200 A)
Base Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 0.01 A)
hFE
hFE(1)/hFE(2)
VCE(sat)
VBE(sat)
250
220
180
150
0.9
380
340
300
230
0.99
0.013
0.075
0.130
0.135
0.780
0.017
0.095
0.170
0.170
0.900
V
V
Base Emitter Turnon Voltage (Note 4)
(IC = 0.1 A, VCE = 2.0 V)
(IC = 0.1 A, VCE = 2.0 V) (Note 6)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
VBE(on)
VBE(1) VBE(2)
fT
100
0.660
0.3
0.750
2.0
V
mV
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cibo
Cobo
250 300 pF
50 65 pF
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
td − − 60 ns
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tr − − 120 ns
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
ts − − 400 ns
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tf − − 130 ns
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
5. hFE(1)/hFE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller hFE is used as numerator.
6. VBE(1) VBE(2) is the absolute difference of one transistor compared to the other transistor within the same package.
http://onsemi.com
3
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