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PDF NSS40300MZ4 Data sheet ( Hoja de datos )
| Número de pieza | NSS40300MZ4 | |
| Descripción | Bipolar Power Transistors | |
| Fabricantes | ON Semiconductor | |
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NSS40300MZ4
Bipolar Power Transistors
40 V, 3.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
C 2,4
B1 E3
Schematic
MARKING
DIAGRAM
SOT−223
CASE 318E
STYLE 1
AYW
40300G
1
A
Y
W
40300
G
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
BCE
1 23
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 1
1
Publication Order Number:
NSS40300MZ4/D
Free Datasheet http://www.datasheet4u.com/
1 page  
NSS40300MZ4
TYPICAL CHARACTERISTICS
600
500
400
300
200
100
0
0.001
150°C
VCE = 1 V
25°C
−40°C
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
10
700
600
500
400
300
200
100
0
0.001
150°C
VCE = 4 V
25°C
−40°C
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
10
1
IC/IB = 10
0.1
0.01
150°C
25°C
−40°C
1
IC/IB = 50
0.1
150°C
25°C
−40°C
0.001
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
0.01
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
1
IC = 2 A
1A
0.1
0.5 A
0.1 A
0.01
1.0E−04 1.0E−03
1.0E−02
1.0E−01
IB, BASE CURRENT (A)
Figure 6. Collector Saturation Region
1.0E+00
1.2
1.1 VCE = 2 V
1.0
0.9
0.8 −40°C
0.7
0.6 25°C
0.5
0.4
0.3 150°C
0.2
0.1
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 7. VBE(on) Voltage
10
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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| PDF Descargar | [ Datasheet NSS40300MZ4.PDF ] | |
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