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Número de pieza | NSS40301MDR2G | |
Descripción | NPN Transistor | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NSS40301MDR2G
Dual Matched 40 V, 6.0 A,
Low VCE(sat) NPN Transistor
These transistors are part of the ON Semiconductor e2PowerEdge
family of Low VCE(sat) transistors. They are assembled to create a pair
of devices highly matched in all parameters, including ultra low
saturation voltage VCE(sat), high current gain and Base/Emitter turn on
voltage.
Typical applications are current mirrors, differential amplifiers,
DC−DC converters and power management in portable and battery
powered products such as cellular and cordless phones, PDAs,
computers, printers, digital cameras and MP3 players. Other
applications are low voltage motor controls in mass storage products
such as disc drives and tape drives. In the automotive industry they can
be used in air bag deployment and in the instrument cluster. The high
current gain allows e2PowerEdge devices to be driven directly from
PMU’s control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.
Features
• Current Gain Matching to 10%
• Base Emitter Voltage Matched to 2 mV
• This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
40 Vdc
40 Vdc
6.0 Vdc
3.0 A
6.0 A
HBM Class 3B
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 VOLTS
6.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 44 mW
COLLECTOR
7,8
COLLECTOR
5,6
2
BASE
4
BASE
1
EMITTER
3
EMITTER
8
1
SOIC−8
CASE 751
STYLE 16
DEVICE MARKING
8
N40301
AYWWG
G
1
N40301 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 1
ORDERING INFORMATION
Device
Package Shipping†
NSS40301MDR2G
SOIC−8
2500 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
NSS40301MD/D
Free Datasheet http://www.datasheet4u.com/
1 page 400
375
350
325
300
275
250
225
200
175
150
0
NSS40301MDR2G
TYPICAL CHARACTERISTICS
80
70
60
50
Cibo (pF)
40
30 Cobo (pF)
20
123
456
10
0 5 10 15 20 25 30 35 40
VEB, EMITTER−BASE VOLTAGE (V)
Figure 7. Input Capacitance
Vcb, COLLECTOR−BASE VOLTAGE (V)
Figure 8. Output Capacitance
10 1 ms
1 s 10 ms
1.0 100 ms
0.1
Thermal Limit
0.01
0.001 Single Pulse Test at TA = 25°C
0.01 0.1
1.0
10
VCE (Vdc)
Figure 9. Safe Operating Area
100
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NSS40301MDR2G.PDF ] |
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