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SDT253 PDF даташит

Спецификация SDT253 изготовлена ​​​​«Sirectifier» и имеет функцию, называемую «Thyristor-Diode Modules».

Детали детали

Номер произв SDT253
Описание Thyristor-Diode Modules
Производители Sirectifier
логотип Sirectifier логотип 

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SDT253 Даташит, Описание, Даташиты
STD/SDT253
Thyristor-Diode Modules, Diode-Thyristor Modules
Type
VRSM
VDSM
V
STD/SDT253GK08 900
STD/SDT253GK12 1300
STD/SDT253GK14 1500
STD/SDT253GK16 1700
STD/SDT253GK18 1900
VRRM
VDRM
V
800
1200
1400
1600
1800
Dimensions in mm (1mm=0.0394")
Symbol
Test Conditions
I , ITRMS FRMS TVJ=TVJM
I , ITAVM FAVM TC=85oC; 180o sine
TVJ=45oC
ITSM, IFSM
VR=0
TVJ=TVJM
VR=0
TVJ=45oC
i2dt
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
(di/dt)cr
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=1A
diG/dt=1A/us
repetitive, IT=750A
non repetitive, IT=250A
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
PGM
TVJ=TVJM
IT=ITAVM
tp=30us
tp=500us
PGAV
VRGM
TVJ
TVJM
Tstg
VISOL
50/60Hz, RMS
IISOL<_1mA
t=1min
t=1s
Md
Mounting torque (M5)
Terminal connection torque (M8)
Weight Typical including screws
Maximum Ratings
400
253
8500
9000
7000
8000
405000
336000
320000
240000
250
800
1000
120
60
20
10
-40...+140
140
-40...+130
3000
3600
2.5-5/22-44
12-15/106-132
430
Unit
A
A
A2s
A/us
V/us
W
W
V
oC
V~
Nm/lb.in.
g
Free Datasheet http://www.datasheet4u.com/









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SDT253 Даташит, Описание, Даташиты
STD/SDT253
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
IRRM
IDRM
VT, VF
VTO
rT
VGT
IGT
VGD
IGD
IL
IH
tgd
tq
QS
IRM
RthJC
RthJK
dS
dA
a
TVJ=TVJM; VR=VRRM; VD=VDRM
IT, IF=750A; TVJ=25oC
For power-loss calculations only (TVJ=140oC)
VD=6V;
VD=6V;
TVJ=TVJM;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
VD=2/3VDRM
TVJ=25oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=1A; diG/dt=1A/us
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=50V/us; VD=2/3VDRM
TVJ=125oC; IT, IF=400A; -di/dt=50A/us
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
Characteristic Values
70
40
1.7
0.85
1.1
2
3
150
200
0.25
10
Unit
mA
mA
V
V
m
V
mA
V
mA
300 mA
150 mA
2 us
typ. 200 us
760
275
0.129
0.0645
0.169
0.0845
12.7
9.6
50
uC
A
K/W
K/W
mm
mm
m/s2
FEATURES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
Free Datasheet http://www.datasheet4u.com/









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SDT253 Даташит, Описание, Даташиты
STD/SDT253
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 2 i2t versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STD/SDT253
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
Free Datasheet http://www.datasheet4u.com/










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Номер в каталогеОписаниеПроизводители
SDT253Thyristor-Diode ModulesSirectifier
Sirectifier

Номер в каталоге Описание Производители
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STMicroelectronics

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