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HER803G Datasheet Download - Taiwan Semiconductor

Номер произв HER803G
Описание (HER801G - HER808G) Glass Passivated High Efficient Rectifiers
Производители Taiwan Semiconductor
логотип Taiwan Semiconductor логотип 

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HER803G Даташит, Описание, Даташиты
HER801G - HER808G
8.0 AMPS. Glass Passivated High Efficient Rectifiers
R-6
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Case: Molded plastic
Epoxy: UL 94V0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260oC/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Mounting position: Any
Weight: 1.65 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol HER HER HER HER HER HER HER HER
801G 802G 803G 804G 805G 806G 807G 808G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@TA = 55 oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
VRRM
VRMS
VDC
I(AV)
IFSM
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
50 100 200 300 400 600 800 1000
8.0
150
Maximum Instantaneous Forward Voltage
@ 8.0A
VF
1.0 1.3 1.7
Maximum DC Reverse Current
@TA=25 oC at Rated DC Blocking Voltage
@ TA=125 oC
Maximum Reverse Recovery Time ( Note 1 )
IR
Trr
10
400
50
80
Typical Junction Capacitance ( Note 2 )
Cj
100
65
Operating Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Units
V
V
V
A
A
V
uA
uA
nS
pF
oC
oC
Version: A06
Free Datasheet http://www.datasheet4u.com/







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HER803G Даташит, Описание, Даташиты
RATINGS AND CHARACTERISTIC CURVES (HER801G THRU HER808G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
9.0
Single Phase
7.5 Half Wave 60Hz
Resistive or
Inductive Load
6.0 0.375" (9.5mm)
Lead Length
4.5
3.0
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
100 Tj=1250C
10 Tj=750C
1.5
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE. (OC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
225
200 8.3ms Single Half Sine Wave
JEDEC Method
175
150
125
100
75
50
25
0
1
10 50 100
1000
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
175
150
125
100
75
HEHRE8R0860G1~GH~EHRE8R0880G5G
50
1
Tj=250C
0.1
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
10
1 HER801G-HER804G
HER805G
0.1
25
0
0.1
HER806G-HER808G
0.5 1 2
5 10 20
REVERSE VOLTAGE. (V)
50 100 200 500 800
0.01
0
0.2 0.4
0.6 0.8 1.0 1.2
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
10
NONINDUCTIVE
+0.5A
trr
(+)
50Vdc
(approx)
(-)
DUT
OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
1.4
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Version: A06
Free Datasheet http://www.datasheet4u.com/










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