NJVMJB44H11 PDF даташит
Спецификация NJVMJB44H11 изготовлена «ON Semiconductor» и имеет функцию, называемую «(NJVMJB44H11 / NJVMJB45H11) Complementary Power Transistors». |
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Детали детали
Номер произв | NJVMJB44H11 |
Описание | (NJVMJB44H11 / NJVMJB45H11) Complementary Power Transistors |
Производители | ON Semiconductor |
логотип |
6 Pages
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MJB44H11 (NPN),
NJVMJB44H11 (NPN),
MJB45H11 (PNP),
NJVMJB45H11 (PNP)
Complementary
Power Transistors
D2PAK for Surface Mount
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Symbol
VCEO
VEB
IC
Value
80
5
10
20
Unit
Vdc
Vdc
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
PD
PD
TJ, Tstg
50
0.4
2.0
0.016
−55 to 150
W
W/°C
W
W/°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5 °C/W
Thermal Resistance, Junction−to−Ambient RqJA
75 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 5
1
http://onsemi.com
SILICON POWER
TRANSISTORS
10 AMPERES,
80 VOLTS, 50 WATTS
MARKING
DIAGRAM
D2PAK
CASE 418B
STYLE 1
B4xH11G
AYWW
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
MJB44H11G
MJB44H11T4G
Package
D2PAK
(Pb−Free)
D2PAK
(Pb−Free)
Shipping†
50 Units/Rail
800/Tape & Reel
NJVMJB44H11T4G D2PAK 800/Tape & Reel
(Pb−Free)
MJB45H11G
D2PAK
(Pb−Free)
50 Units/Rail
MJB45H11T4G
D2PAK 800/Tape & Reel
(Pb−Free)
NJVMJB45H11T4G D2PAK 800/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MJB44H11/D
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MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0)
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current (VEB = 5 Vdc)
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc)
DC Current Gain (VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain (VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Gain
Bandwidth
Product
(IC
=
0.5
Adc,
VCE
=
10
Vdc, f = 20 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
SWITCHING TIMES
Delay and Rise Times(IC = 5 Adc, IB1 = 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Storage Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Fall Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Symbol
VCEO(sus)
ICES
IEBO
VCE(sat)
VBE(sat)
hFE
Ccb
fT
td + tr
ts
tf
Min Typ Max Unit
80 −
− Vdc
− − 10 mA
− − 50 mA
− − 1.0 Vdc
− − 1.5 Vdc
60 − − −
40 −
−
− 130 −
− 230 −
pF
MHz
− 50 −
− 40 −
− 300 −
− 135 −
− 500 −
− 500 −
− 140 −
− 100 −
ns
ns
ns
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1
0.2
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10
t, TIME (ms)
20
50 100 200
500
Figure 1. Thermal Response
1.0 k
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No Preview Available ! |
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
100
50
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
1.0
TC ≤ 70° C
DUTY CYCLE ≤ 50%
dc
1.0 ms
100 ms
10 ms
1.0 ms
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
TA TC
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 3. Power Derating
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3
Free Datasheet http://www.datasheet4u.com/
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