DataSheet26.com

NJVMJB44H11 PDF даташит

Спецификация NJVMJB44H11 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «(NJVMJB44H11 / NJVMJB45H11) Complementary Power Transistors».

Детали детали

Номер произв NJVMJB44H11
Описание (NJVMJB44H11 / NJVMJB45H11) Complementary Power Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

6 Pages
scroll

No Preview Available !

NJVMJB44H11 Даташит, Описание, Даташиты
MJB44H11 (NPN),
NJVMJB44H11 (NPN),
MJB45H11 (PNP),
NJVMJB45H11 (PNP)
Complementary
Power Transistors
D2PAK for Surface Mount
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
Low CollectorEmitter Saturation Voltage
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
PbFree Packages are Available
MAXIMUM RATINGS
Rating
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current Continuous
Peak
Symbol
VCEO
VEB
IC
Value
80
5
10
20
Unit
Vdc
Vdc
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
PD
PD
TJ, Tstg
50
0.4
2.0
0.016
55 to 150
W
W/°C
W
W/°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
2.5 °C/W
Thermal Resistance, JunctiontoAmbient RqJA
75 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 5
1
http://onsemi.com
SILICON POWER
TRANSISTORS
10 AMPERES,
80 VOLTS, 50 WATTS
MARKING
DIAGRAM
D2PAK
CASE 418B
STYLE 1
B4xH11G
AYWW
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
MJB44H11G
MJB44H11T4G
Package
D2PAK
(PbFree)
D2PAK
(PbFree)
Shipping
50 Units/Rail
800/Tape & Reel
NJVMJB44H11T4G D2PAK 800/Tape & Reel
(PbFree)
MJB45H11G
D2PAK
(PbFree)
50 Units/Rail
MJB45H11T4G
D2PAK 800/Tape & Reel
(PbFree)
NJVMJB45H11T4G D2PAK 800/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MJB44H11/D
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

NJVMJB44H11 Даташит, Описание, Даташиты
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (IC = 30 mA, IB = 0)
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current (VEB = 5 Vdc)
ON CHARACTERISTICS
CollectorEmitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
BaseEmitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc)
DC Current Gain (VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain (VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Gain
Bandwidth
Product
(IC
=
0.5
Adc,
VCE
=
10
Vdc, f = 20 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
SWITCHING TIMES
Delay and Rise Times(IC = 5 Adc, IB1 = 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Storage Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Fall Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Symbol
VCEO(sus)
ICES
IEBO
VCE(sat)
VBE(sat)
hFE
Ccb
fT
td + tr
ts
tf
Min Typ Max Unit
80
Vdc
− − 10 mA
− − 50 mA
− − 1.0 Vdc
− − 1.5 Vdc
60 − − −
40
130
230
pF
MHz
50
40
300
135
500
500
140
100
ns
ns
ns
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1
0.2
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10
t, TIME (ms)
20
50 100 200
500
Figure 1. Thermal Response
1.0 k
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

NJVMJB44H11 Даташит, Описание, Даташиты
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
100
50
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
1.0
TC 70° C
DUTY CYCLE 50%
dc
1.0 ms
100 ms
10 ms
1.0 ms
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
TA TC
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 3. Power Derating
http://onsemi.com
3
Free Datasheet http://www.datasheet4u.com/










Скачать PDF:

[ NJVMJB44H11.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NJVMJB44H11(NJVMJB44H11 / NJVMJB45H11) Complementary Power TransistorsON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск