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NJVMJD31T4G PDF даташит

Спецификация NJVMJD31T4G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Complementary Power Transistors».

Детали детали

Номер произв NJVMJD31T4G
Описание Complementary Power Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NJVMJD31T4G Даташит, Описание, Даташиты
MJD31, NJVMJD31T4G,
MJD31C, NJVMJD31CT4G
(NPN), MJD32,
NJVMJD32T4G, MJD32C,
NJVMJD32CG,
NJVMJD32CT4G (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
http://onsemi.com
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
COMPLEMENTARY
COLLECTOR
2,4
COLLECTOR
2,4
1
BASE
3
EMITTER
1
BASE
3
EMITTER
4
12
3
DPAK
CASE 369C
STYLE 1
4
12 3
IPAK
CASE 369D
STYLE 1
MARKING DIAGRAMS
AYWW
J3xxG
YWW
J3xxG
DPAK
A
Y
WW
xx
G
IPAK
= Site Code
= Year
= Work Week
= 1, 1C, 2, or 2C
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
July, 2013 Rev. 12
1
Publication Order Number:
MJD31/D
Free Datasheet http://www.datasheet4u.com/









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NJVMJD31T4G Даташит, Описание, Даташиты
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
MAXIMUM RATINGS
Rating
CollectorEmitter Voltage
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
Symbol
VCEO
Max
40
100
Unit
Vdc
CollectorBase Voltage
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
VCB Vdc
40
100
EmitterBase Voltage
Collector Current Continuous
Collector Current Peak
Base Current
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
VEB 5.0 Vdc
IC 3.0 Adc
ICM 5.0 Adc
IB 1.0 Adc
PD W
15 W/°C
0.12
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD W
1.56
0.012
W/°C
Operating and Storage Junction Temperature Range
ESD Human Body Model
TJ, Tstg
HBM
65 to + 150
3B
°C
V
ESD Machine Model
MM C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient*
Lead Temperature for Soldering Purposes
Symbol
RqJC
RqJA
TL
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Max
8.3
80
260
Unit
°C/W
°C/W
°C
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.com/









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NJVMJD31T4G Даташит, Описание, Даташиты
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
(VCE = 60 Vdc, IB = 0)
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
Collector Cutoff Current
(VCE = Rated VCEO, VEB = 0)
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
CollectorEmitter Saturation Voltage
(IC = 3 Adc, IB = 375 mAdc)
BaseEmitter On Voltage
(IC = 3 Adc, VCE = 4 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
SmallSignal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. fT = hfe⎪• ftest.
Symbol
Min
VCEO(sus)
ICEO
ICES
IEBO
40
100
hFE
VCE(sat)
VBE(on)
25
10
fT
3
hfe
20
Max Unit
Vdc
mAdc
50
50
mAdc
20
mAdc
1
50
Vdc
1.2
Vdc
1.8
MHz
http://onsemi.com
3
Free Datasheet http://www.datasheet4u.com/










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Номер в каталогеОписаниеПроизводители
NJVMJD31T4GComplementary Power TransistorsON Semiconductor
ON Semiconductor

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