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PDF NTMFS4C08N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4C08N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4C08N
Power MOSFET
30 V, 52 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
TA = 80°C
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
Steady
State
TA = 25°C
TA = 25°C
TA = 80°C
TA = 25°C
TC = 25°C
TC =80°C
Power Dissipation
RqJC (Note 1)
Pulsed Drain Current
Pulsed Source
Current (Body Diode)
TC = 25°C
TA = 25°C, tp = 10 ms
TA = 25°C, tp = 10 ms
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
ISM
30
±20
16.4
12.3
2.51
25.3
19.0
6.0
9.0
6.8
0.76
52
39
25.5
144
560
V
V
A
W
A
W
A
W
A
W
A
A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 29 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
80
−55 to
+150
23
7.0
42
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 21 Apk, EAS = 22 mJ.
www.onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.8 mW @ 10 V
8.5 mW @ 4.5 V
D (5−8)
ID MAX
52 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAMS
D
SO−8 FLAT LEAD
CASE 488AA
S
S
STYLE 1
S
4C08N
AYWZZ
D
GD
1D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
ORDERING INFORMATION
Device
NTMFS4C08NT1G
Package Shipping†
SO−8 FL 1500 /
(Pb−Free) Tape & Reel
NTMFS4C08NT3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 6
1
Publication Order Number:
NTMFS4C08N/D
1 page  
NTMFS4C08N
TYPICAL CHARACTERISTICS
1800
1600
1400
1200
1000
800
600
400
200
0
0
Ciss
Coss
VGS = 0 V
TJ = 25°C
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
tr
tf
td(off)
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10
1 0 V < VGS < 10 V
Single Pulse
TC = 25°C
0.1 RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.01 0.1
1
10 ms
100 ms
1 ms
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
QT
8
6
Qgs
4
Qgd
TJ = 25°C
2
VDD = 15 V
VGS = 10 V
ID = 30 A
0
0 2 4 6 8 10 12 14 16 18 20
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18 VGS = 0 V
16
14
12
10
8
6 TJ = 125°C
4
2
TJ = 25°C
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
22
20 ID = 21 A
18
16
14
12
10
8
6
4
2
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
www.onsemi.com
5
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