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HIP5011IS1 PDF даташит

Спецификация HIP5011IS1 изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «7V/ 17A SynchroFET Complementary Drive Synchronous Half-Bridge».

Детали детали

Номер произв HIP5011IS1
Описание 7V/ 17A SynchroFET Complementary Drive Synchronous Half-Bridge
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HIP5011IS1 Даташит, Описание, Даташиты
Data Sheet
HIP5010, HIP5011
March 1996 File Number 4029.5
7V, 17A SynchroFET™ Complementary
Drive Synchronous Half-Bridge
Designed with the P6 and Pentium® in mind, the Intersil
SynchroFET™ family provides a new approach for
implementing a synchronous rectified buck switching regulator.
The SynchroFET replaces two power DMOSs, a Schottky
diode, two gate drivers and synchronous control circuitry. The
complementary drive circuit turns the upper FET on and the
lower FET off when the input from the PWM is high. When the
input from the PWM goes low the upper FET turns off and the
lower FET turns on. The HIP5011 has a PWM pin that inverts
the relationship from the input to PHASE. This architecture
allows the designer to utilize a low cost single-ended PWM
controller in either a current or voltage mode configuration. The
SynchroFET operates in continuous conduction mode reducing
EMI constraints and enabling high bandwidth operation.
Several features ensure easy start-up. First, the supply currents
stay below specification as the supply voltages ramp up; no
unexpected surges occur that might perturb a soft-start or
deplete a charge-pump. Second, any power-up sequence of
the VCC, VIN, or PWM pins can be used without causing large
currents. Third, the chip operates when VCC is greater than 2V
so VCC can be created from a charge pump powered from VIN.
Pinouts
HIP5010IS1, HIP5011IS1 (SIP - VERTICAL)
TOP VIEW
GND (TAB)
7 PHASE
6 VIN
5 PWM (HIP5010), PWM (HIP5011)
4
3 VCC
2 VIN
1 PHASE
FRONT ROWS = PINS 1, 3, 5, 7
BACK ROWS = PINS 2, 4, 6
GND
(TAB)
HIP5010IS, HIP5011IS (SIP - GULLWING)
TOP VIEW
7 PHASE
6 VIN
5 PWM (HIP5010), PWM (HIP5011)
4
3 VCC
2 VIN
1 PHASE
Features
• Complementary Drive, Half-Bridge Power NMOS
• Use With Low-Cost Single-Output PWM Controllers
• Improve Efficiency Over Conventional Buck Converter with
Schottky Clamp
• Minimum Deadtime Provided by Adaptive Shoot-Through
Protection Eliminates External Schottky
• Grounded Case for Low EMI and Simple Heatsinking
• Low Operating Current
• Frequency Exceeding 1MHz
• Dual Polarity Input Options
• All Pins Surge Protected
Applications
• 5V to 3.3V Synchronous Buck Converters
• Pentium and P6 Power Supplies
• PowerPCPower Supplies
• Bus Terminations (BTL and GTL)
• Drive 5V Motors Directly from Microprocessor
Ordering Information
PART
TEMP.
NUMBER RANGE (oC)
PACKAGE
PKG.
NO.
HIP5010IS
HIP5010IS1
HIP5011IS
-40 to 85
-40 to 85
-40 to 85
7 Ld Gullwing SIP
Z7.05B
7 Ld Staggered Vertical SIP Z7.05C
7 Ld Gullwing SIP
Z7.05B
HIP5011IS1 -40 to 85 7 Ld Staggered Vertical SIP Z7.05C
Typical Application Block Diagram
+12V
+5V
VCC
VIN
PWM
CONTROLLER
PWM
CONTROL
PHASE
+3.3V
HIP5010
GND
SYNCHRONOUS RECTIFIED BUCK CONVERTER
Pentium® is a registered trademark of Intel Corporation.
PowerPC™ is a trademark of International Business Machines.
SynchroFET™ is a trademark of Intersil Corporation.
2-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999









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HIP5011IS1 Даташит, Описание, Даташиты
HIP5010, HIP5011
Non-Inverting SynchroFET Block Diagram
HIP5010
VCC
DRIVER
PWM
BUFFER
VCC
ADAPTIVE
SHOOT-THROUGH
PROTECTION
DRIVER
Inverting SynchroFET Block Diagram
VCC
HIP5011
DRIVER
PWM
BUFFER
VCC
ADAPTIVE
SHOOT-THROUGH
PROTECTION
DRIVER
VIN
PHASE
GND
VIN
PHASE
GND
2-4









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HIP5011IS1 Даташит, Описание, Даташиты
HIP5010, HIP5011
Absolute Maximum Ratings
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16V
Input Voltage
IPHASE, IVIN,
VIN . . . . . .
IGND (TJ =
.....
25oC)
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
....
17A
.........
(Repetitive
. +7V
Peak)
IPHASE, IVIN, IGND (TJ = 150oC) . . . . . . . . . . 15A (Repetitive Peak)
PWM Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -4V to +16V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 3 (4kV)
Lead Temperature (Soldering 10s) (Lead Tips Only). . . . . . . 300oC
Storage Temperature Range . . . . . . . . . . . . . . . . . . -65oC to 150oC
Junction Temperature Range . . . . . . . . . . . . . . . . . . -40oC to 150oC
Operating Conditions
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . +12V, 20%
Input Voltage VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 5.5V
Supply Voltage, VCC, minimum for charge-pumped start-up . +4.0V
Thermal Information (Typical)
Package
θJC ††
(oC/W)
0
θJA (oC/W)
123
3†††
SOIC (IB) . . . 26 63 45 42 41 35
SIP (IS). . . . . 2
55 30 25 24 18
SIP (IS1). . . . 2 - - - - -
Versus additional square inches of 1 ounce copper on the
printed circuit board.
†† θJC is measured to pin 12 for the SOIC. Printed circuit board
had 1 square inch of copper. For SIP Packages value shown is
typical with an infinite heat sink.
††† 200 linear feet per minute of air flow.
IPHASE.SIPs:11.5A(RMS), 11.2A(DC); SOIC:7.4A(RMS), 7.4A(DC)
IVIN . . . SIPs:10.0A(RMS), 8.5A(DC); SOIC:6.4A(RMS), 6.4A(DC)
IGND. . . . .SIPs:8.5A(RMS), 6.0A(DC); SOIC:5.4A(RMS), 5.4A(DC)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
Electrical Specifications
PARAMETERS
rDS(ON) Upper MOSFET
rDS(ON) Lower MOSFET
VIN Operating Current
VIN Quiescent Current
VCC Operating Current
VCC Quiescent Current (HIP5010)
VCC Quiescent Current (HIP5010)
VCC Quiescent Current (HIP5011)
VCC Quiescent Current (HIP5011)
Low Level PWM Input Voltage
High Level PWM Input Voltage
PWM Input Voltage Hysteresis
Input Pulldown Resistance (HIP5010)
Input Pullup Resistance (HIP5011)
SYMBOL
TEST CONDITIONS
RDSU
RDSL
IVINO
IVIN
ICCO
ICCIH
ICCIL
ICCNIH
ICCNIL
VIL
VIH
VIHYS
RPWM
RPWM
VCC = 12V, VIN = 5V
VCC = 12V, VIN = 5V
VIN = 5V, No Load, 500kHz
PWM or PWM = VCC or GND
VCC = 12V, 500kHz
PWM = VCC
PWM = GND
PWM = VCC
PWM = GND
Switching Specifications
PARAMETERS
Upper Device Turn-Off Delay
Lower Device Turn-Off Delay
Dead Time
Phase Rise-Time
Phase Fall-Time
SYMBOL
TEST CONDITIONS
tPHL
tPLH
tDT
tr
tf
VCC = 12V, IPHASE = -1A
VCC = 12V, IPHASE = +1A
VCC = +12V, IPHASE = -1A
VCC = 12V, IPHASE = -1A
VCC = 12V, IPHASE = +1A
TJ = 25oC
MIN TYP MAX
- 34 39
- 36 42
- 58
- 0.1 10
- 8 12
- 80 -
- 0.1 10
- 0.1 10
- 140 -
- 1.8 -
- 2.1 -
- 0.3 -
- 220 -
- 220 -
TJ
TJ
=
=
- 40oC
150oC
MIN MAX UNITS
- 65 m
- 68 m
- 10 mA
- 100 µA
- 15 mA
- 400 µA
- 100 µA
- 100 µA
- 400 µA
1- V
-3V
--V
100 400 k
100 400 k
TJ = 25oC
MIN TYP MAX
- 30 50
- 30 50
- 10 -
- 20 -
- 20 -
TJ
TJ
=
=
- 40oC
150oC
MIN MAX UNITS
- 80 ns
- 80 ns
- - ns
- - ns
- - ns
2-5










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Номер в каталогеОписаниеПроизводители
HIP5011IS7V/ 17A SynchroFET Complementary Drive Synchronous Half-BridgeIntersil Corporation
Intersil Corporation
HIP5011IS17V/ 17A SynchroFET Complementary Drive Synchronous Half-BridgeIntersil Corporation
Intersil Corporation

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