DataSheet26.com

C4351 PDF даташит

Спецификация C4351 изготовлена ​​​​«NEC» и имеет функцию, называемую «NPN Transistor - 2SC4351».

Детали детали

Номер произв C4351
Описание NPN Transistor - 2SC4351
Производители NEC
логотип NEC логотип 

6 Pages
scroll

No Preview Available !

C4351 Даташит, Описание, Даташиты
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SC4351
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SC4351 is a high-speed Darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse motors or blushless motor of OA and FA equipment.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• On-chip C to B constant voltage diode for surge voltage
absorption
• On-chip C to E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
IB(DC)
Total power dissipation
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50%
Ratings
60 ± 10
60 ± 10
8.0
±5.0
±10
0.5
20
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15594EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

C4351 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 40 V, IE = 0
DC current gain
hFE1* VCE = 2.0 V, IC = 2.0 A
DC current gain
hFE2* VCE = 2.0 V, IC = 4.0 A
Collector saturation voltage VCE(sat)* IC = 2.0 A, IB = 2.0 mA
Base saturation voltage
VBE(sat)* IC = 2.0 A, IB = 2.0 mA
Turn-on time
Storage time
Fall time
ton IC = 2.0 A, IB1 = IB2 = 2.0 mA,
tstg RL = 25 , VCC 50 V
Refer to the test circuit.
tf
* Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE1
M
2,000 to 5,000
L
4,000 to 10,000
K
8,000 to 20,000
2SC4351
MIN.
2,000
500
TYP.
MAX.
0.5
20,000
1.5
2.0
0.7
2.5
0.6
Unit
µA
V
V
µs
µs
µs
2 Data Sheet D15594EJ2V0DS
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

C4351 Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (Ta = 25°C)
2SC4351
Case Temperature TC (°C)
Case Temperature TC (°C)
Collector to Emitter Voltage VCE (V)
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
Data Sheet D15594EJ2V0DS
3
Free Datasheet http://www.datasheet4u.com/










Скачать PDF:

[ C4351.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
C4351NPN Transistor - 2SC4351NEC
NEC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск