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NTMFD4901NF PDF даташит

Спецификация NTMFD4901NF изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Dual N-Channel Power MOSFET».

Детали детали

Номер произв NTMFD4901NF
Описание Dual N-Channel Power MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTMFD4901NF Даташит, Описание, Даташиты
NTMFD4901NF
Dual N-Channel Power
MOSFET with Integrated
Schottky
30 V, High Side 18 A / Low Side 30 A, Dual
NChannel SO8FL
Features
CoPackaged Power Stage Solution to Minimize Board Space
Low Side MOSFET with Integrated Schottky
Minimized Parasitic Inductances
Optimized Devices to Reduce Power Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
System Voltage Rails
Point of Load
http://onsemi.com
V(BR)DSS
Q1 Top FET
30 V
Q2 Bottom
FET
30 V
RDS(ON) MAX
6.5 mW @ 10 V
10 mW @ 4.5 V
2.35 mW @ 10 V
3.5 mW @ 4.5 V
ID MAX
18 A
30 A
D1 (2, 3, 4, 9)
(1) G1
S1/D2 (10)
© Semiconductor Components Industries, LLC, 2012
May, 2012 Rev. 3
(8) G2
S2 (5, 6, 7)
PIN CONNECTIONS
D1 4
5 S2
D1 3
D1 2
9 10
D1 S1/D2
6 S2
7 S2
G1 1
(Bottom View)
8 G2
MARKING
DIAGRAM
1
DFN8
CASE 506BX
4901NF
AYWZZ
1
4901NF = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1 Publication Order Number:
NTMFD4901NF/D
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NTMFD4901NF Даташит, Описание, Даташиты
NTMFD4901NF
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
DraintoSource Voltage
Q1 VDSS 30 V
Q2
GatetoSource Voltage
GatetoSource Voltage
Q1 VGS
Q2
±20 V
Continuous Drain Current RqJA (Note 1)
Power Dissipation
RqJA (Note 1)
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25°C
Q1
Q2
Q1
Q2
ID
PD
13.5
9.7
23.4 A
16.9
1.90 W
2.07
Continuous Drain Current RqJA 10 s (Note 1)
Power Dissipation
RqJA 10 s (Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25°C
Q1
Q2
Q1
Q2
ID
PD
18.2
13.1
A
30.3
21.8
3.45 W
3.45
Continuous Drain Current
RqJA (Note 2)
Power Dissipation
RqJA (Note 2)
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25 °C
Q1
Q2
Q1
Q2
ID
PD
10.3
7.4
17.9 A
12.9
1.10 W
1.20
Pulsed Drain Current
TA = 25°C
tp = 10 ms
Q1
Q2
IDM
60 A
100
Operating Junction and Storage Temperature
Q1 TJ, TSTG
Q2
55 to +150
°C
Source Current (Body Diode)
Q1 IS
Q2
3.4 A
4.9
Drain to Source DV/DT
dV/dt
6 V/ns
Single Pulse DraintoSource Avalanche Energy (TJ = 25C, VDD
= 50 V, VGS = 10 V, IL = XX Apk, L = 0.1 mH, RG = 25 W)
24 A
48 A
Q1 EAS
Q2 EAS
28.8 mJ
115
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 2 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size of 100 mm2.
http://onsemi.com
2
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NTMFD4901NF Даташит, Описание, Даташиты
NTMFD4901NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
FET Symbol
JunctiontoAmbient – Steady State (Note 3)
Q1 RqJA
Q2
JunctiontoAmbient – Steady State (Note 4)
Q1 RqJA
Q2
JunctiontoAmbient – (t 10 s) (Note 3)
Q1 RqJA
Q2
3. Surfacemounted on FR4 board using 1 sqin pad, 2 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size of 100 mm2.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
FET Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Break-
down Voltage
DraintoSource Break-
down Voltage Temperature
Coefficient
Q1 V(BR)DSS
Q2
Q1 V(BR)DSS
Q2 / TJ
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID = 1 mA
Zero Gate Voltage Drain
Current
Q1 IDSS
Q2
GatetoSource Leakage Q1 IGSS
Current
Q2
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VGS = 0 V,
VDS = 24 V
TJ = 25°C
VGS = 0 V, VDS = ±20 V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Q1 VGS(TH)
Q2
VGS = VDS, ID = 250 mA
Negative Threshold Temper- Q1 VGS(TH) /
ature Coefficient
Q2 TJ
DraintoSource On Resist-
ance
Q1
Q2
RDS(on)
Forward Transconductance
Q1
Q2
gFS
VGS = 10 V
ID = 10 A
VGS = 4.5 V
ID = 10 A
VGS = 10 V
ID = 20 A
VGS = 4.5 V
ID = 20 A
VDS = 1.5 V, ID = 10 A
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Q1
Q2 CISS
Output Capacitance
Q1
Q2 COSS
VGS = 0 V, f = 1 MHz, VDS = 15 V
Reverse Capacitance
Q1
Q2 CRSS
5. Pulse Test: pulse width 300 ms, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
Value
65.9
60.5
113.2
104
36.2
36.2
Unit
°C/W
Min Typ Max Unit
30 V
30
18 mV /
15 °C
1 mA
10
500
±100
±100
nA
1.2 2.2 V
1.2 2.2
4.5 mV /
4.0 °C
5.2 6.5
8.0 10
1.9 2.35 mW
2.8 3.5
28 S
45
1150
2950
360
1100
105
82
pF
http://onsemi.com
3
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Номер в каталогеОписаниеПроизводители
NTMFD4901NFDual N-Channel Power MOSFETON Semiconductor
ON Semiconductor

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