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PDF NCP5359A Data sheet ( Hoja de datos )

Número de pieza NCP5359A
Descripción Gate Driver
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No Preview Available ! NCP5359A Hoja de datos, Descripción, Manual

NCP5359A
Gate Driver for Notebook
Power Systems
The NCP5359A is a high performance dual MOSFET gate driver
optimized to drive the gates of both highside and lowside power
MOSFETs in a synchronous buck converter. Each of the drivers can
drive up to 3 nF load with a 25 ns propagation delay and 15 ns
transition time.
Adaptive nonoverlap and power saving operation circuit can
provide a low switching loss and high efficiency solution for notebook
and desktop systems.
A high floating top driver design can accommodate VBST voltage
as high as 35 V, with transient voltages as high as 35 V. Bidirectional
EN pin can provide a fault signal to controller when the gate driver
fault detect under OVP, UVLO occur. Also, an undervoltage lockout
function guarantees the outputs are low when supply voltage is low,
and a thermal shutdown function provides the IC with
overtemperature protection.
Features
Faster Rise and Fall Times
Thermal Shutdown Protection
Adaptive Nonoverlap Circuit
Floating Top Driver Accommodates Boost Voltages of up to 30 V
Output Disable Control Turns Off Both MOSFETs
Complies with VRM 11.1 Specifications
Undervoltage Lockout
Power Saving Operation Under Light Load Conditions
Thermally Enhanced Package
These are PbFree Devices
Typical Applications
Power Solutions for Desktop and Notebook Systems
© Semiconductor Components Industries, LLC, 2009
September, 2009 Rev. 1
1
8
1
1
http://onsemi.com
MARKING
DIAGRAMS
8
SOIC8
D SUFFIX
CASE 751
5359A
ALYW
G
1
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbFree Package
DFN8
MN SUFFIX
CASE 506AA
1
AA = Device Code
M = Date Code
G = PbFree Package
4
PIN CONNECTIONS
1
BST
PWM
EN
VCC
1
8
DRVH
SW
GND
DRVL
8
BST
PWM
EN
VCC
DRVH
SW
GND
DRVL
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
NCP5359ADR2G SOIC8
(PbFree)
NCP5359AMNR2G DFN8
(PbFree)
2500 Tape & Reel
3000 Tape & Reel
NCP5359AMNTBG DFN8 3000 Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NCP5359A/D
Free Datasheet http://www.datasheet4u.com/

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NCP5359A pdf
NCP5359A
ELECTRICAL CHARACTERISTICS (VCC = 10 V 13.2 V, TA = 0°C to +85°C, VEN = 5 V unless otherwise noted)
Characteristics
Symbol
Test Conditions
Min Typ
Supply Voltage
VCC Operating Voltage
Power ON Reset threshold
Supply Current
VCC Quiescent Supply Current in Normal
Operation
VCC Standby Current
BST Quiescent Supply Current in Normal
Operation
BST Standby Current
Undervoltage Lockout
VCC Start Threshold
VCC UVLO Hysteresis
Output Overvoltage Trip Threshold at
Startup
VCC
VPOR
IVCC_NORM
IVCC_SBC
IBST1_normal
IBST2_normal
IBST1_SD
IBST2_SD
EN = 5 V, PWM = OSC, FSW = 100 k
CLOAD = 0 p
EN = GND; No switching
PWM = +5 V, SW = 0 V
PWM = GND, SW = 0 V
PWM = +5 V
PWM = GND
VCCTH
VCCHYS
OVPSU
Power Startup time, VCC > 9 V.
(Without trimming)
10
8.2
1.8
2.8
5.0
0.5
1.0
1.0
0.25
0.25
8.7
1.0
EN Input
Input Voltage High
Input Voltage Low
Hysteresis (Note 4)
Enable Pin Sink Current
Propagation Delay Time (Note 4)
VEN_HI
VEN_LOW
VEN_HYS
IEN_SINK
tpdhEN
tpdlEN
VCC = 5.5 V
PWM Input
DRVH Comparator Drop Threshold
VTH_DRVH
PWM Input Self Bias Voltage
DRVL Comparator Rise Threshold
VPWM
VTH_DRVL
Input Current
IPWM
PWM = 0 V, EN = GND
High Side Driver
Output Resistance, Sourcing
Output Resistance, Sinking
Output Resistance, unbiased (Note 4)
RH_TG
RL_TG
VBST – VSW = 12 V
VBST – VSW = 12 V
BST SW = 0 V
SW Pull Down Resistance (Note 4)
SW to GND
Transition Time (Note 6)
Propagation Delay (Notes 4 & 5)
trDRVH
tfDRVH
tpdhDRVH
tpdlDRVH
CLOAD = 3 nF, VBST – VSW = 12 V
CLOAD = 3 nF, VBST – VSW = 12 V
Driving High, CLOAD = 3 nF
Driving Low, CLOAD = 3 nF
Low Side Driver
Output Resistance, Sourcing
Output Resistance, Sinking
Output Resistance, unbiased (Note 4)
RH_BG
RL_BG
SW = GND
SW = VCC
BST SW = 0 V
Transition Time (Note 6)
Propagation Delay (Notes 4 & 5)
Negative Current Detector Threshold
Thermal Shutdown
trDRVL
tfDRVL
tpdhDRVL
tpdlDRVL
VNCDT
CLOAD = 3 nF
CLOAD = 3 nF
Driving High, CLOAD = 3 nF
Driving Low, CLOAD = 3 nF
(Note 6)
Thermal Shutdown
Tsd (Note 6)
Thermal Shutdown Hysteresis
Tsdhys
(Note 6)
4. Guaranteed by design; not tested in production .
5. For propagation delays, ”tpdh” refers to the specified signal going high ”tpdl” refers to it going low.
6. Design guaranteed.
2.0
4.0
2.2
1.4
10
10
10
15
10
10
15
150
500
20
20
1.5
30
2.0
1.0
16
15
2.0
1.0
16
15
1.0
170
20
Max Units
13.2 V
V
8.0 mA
2.5 mA
1.8 mA
1.8
mA
9.5 V
V
2.0 V
V
1.0 V
mV
mA
60 ns
60 ns
V
1.6 V
0.8 V
mA
3.5 W
2.5 W
55 kW
55 kW
25 ns
20
35 ns
30
3.5 W
2.5 W
55 kW
25 ns
20
35 ns
35
mV
°C
°C
http://onsemi.com
5
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