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PDF HMJE13007A Data sheet ( Hoja de datos )
| Número de pieza | HMJE13007A | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Hi-Sincerity | |
| Logotipo |  |
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HI-SINCERITY
MICROELECTRONICS CORP.
HMJE13007A
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE200501
Issued Date : 2005.06.01
Revised Date : 2006.07.04
Page No. : 1/5
Description
• High Voltage, High Speed Power Switch
• Switch Regulators
• PWM Inverters and Motor Controls
• Solenoid and Relay Drivers
• Deflection Circuits
TO-220
Absolute Maximum Ratings (TA=25°C)
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150 °C
Junction Temperature ..................................................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TC=25°C) .................................................................................................................... 80 W
• Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Emitter Voltage ...................................................................................................................... 700 V
VCEO Collector to Emitter Voltage ...................................................................................................................... 400 V
VEBO Emitter to Base Voltage ................................................................................................................................ 9 V
IC Collector Current ........................................................................................................................... Continuous 8 A
IB Base Current .................................................................................................................................. Continuous 4 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
IEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
Min. Typ. Max.
700 -
-
400 -
-
- - 100
- - 100
- -1
- -2
- -3
- - 1.2
- - 1.6
15 -
-
15 - 25
13 -
-
Unit
V
V
uA
uA
V
V
V
V
V
Test Conditions
IC=1mA, VBE(off)=1.5V
IC=10mA
VEB=9V
VCE=700V, VBE(off)=1.5V
IC=2A, IB=0.4A
IC=5A, IB=1A
IC=8A, IB=2A
IC=2A, IB=0.4A
IC=5A, IB=1A
IC=0.5A, VCE=5V
IC=2A, VCE=5V
IC=4A, VCE=5V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMJE13007A
HSMC Product Specification
Free Datasheet http://www.datasheet4u.com/
1 page  
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
TP
TL
Tsmax
Ramp-up
tP
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Peak temperature
245oC ±5oC
260oC ±5oC
Spec. No. : HE200501
Issued Date : 2005.06.01
Revised Date : 2006.07.04
Page No. : 5/5
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
10sec ±1sec
10sec ±1sec
HMJE13007A
HSMC Product Specification
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet HMJE13007A.PDF ] | |
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