NTTFS4800N PDF даташит
Спецификация NTTFS4800N изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTTFS4800N |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
7 Pages
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NTTFS4800N
Power MOSFET
30 V, 32 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Point of Load
• Power Load Switch
• Notebook Battery Management
• Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
8.3 A
TA = 85°C
6.0
TA = 25°C
PD
2.2 W
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 85°C
ID
11.8 A
8.5
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Current Limited by Pkg.
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
PD
ID
PD
ID
PD
IDM
IDmaxPkg
TJ,
Tstg
IS
dV/dt
4.5 W
5.0 A
3.6
0.86 W
32 A
23
33.8 W
57
20
−55 to
+150
28
6.0
A
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche Energy EAS 36.6 mJ
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 27 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 0
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
20 mW @ 10 V
27 mW @ 4.5 V
ID MAX
32 A
N−Channel MOSFET
D (5−8)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
SD
S 4800 D
S AYWWG D
GGD
4800
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4800NTAG WDFN8 1500/Tape & Reel
(Pb−Free)
NTTFS4800NTWG WDFN8 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4800N/D
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
NTTFS4800N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V to 11.5 V
ID = 20 A
ID = 10 A
VGS = 4.5 V
ID = 20 A
ID = 10 A
VDS = 1.5 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 20 A
VGS = 10 V, VDS = 15 V, ID = 20 A
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
3.7
56.7
146
27.8
Unit
°C/W
Min Typ Max Unit
30
16.2
V
mV/°C
1.0
10
±100
mA
nA
1.5 3.0 V
5.7 mV/°C
11.1 20 mW
11
18 27
17
28 S
964 pF
225
125
8.4 nC
1.2
3.4
3.8
16.6 nC
11.1 ns
21.8
14
3.4
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
NTTFS4800N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
7.6 ns
19.5
19
2.1
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 20 A
TJ = 25°C
TJ = 125°C
VGS
=
0
VI,Sd=IS/2d0t
=
A
100
A/ms,
0.93 1.2 V
0.83
16.8 ns
8.7
8.1
6.8 nC
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
0.66 nH
0.20
1.5
1.5 3.0 W
http://onsemi.com
3
Free Datasheet http://www.datasheet4u.com/
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NTTFS4800N | Power MOSFET ( Transistor ) | ON Semiconductor |
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