DataSheet26.com

NTTFS4800N PDF даташит

Спецификация NTTFS4800N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTTFS4800N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

7 Pages
scroll

No Preview Available !

NTTFS4800N Даташит, Описание, Даташиты
NTTFS4800N
Power MOSFET
30 V, 32 A, Single NChannel, m8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
Point of Load
Power Load Switch
Notebook Battery Management
Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
8.3 A
TA = 85°C
6.0
TA = 25°C
PD
2.2 W
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C
TA = 85°C
ID
11.8 A
8.5
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Current Limited by Pkg.
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
PD
ID
PD
ID
PD
IDM
IDmaxPkg
TJ,
Tstg
IS
dV/dt
4.5 W
5.0 A
3.6
0.86 W
32 A
23
33.8 W
57
20
55 to
+150
28
6.0
A
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche Energy EAS 36.6 mJ
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 27 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
October, 2009 Rev. 0
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
20 mW @ 10 V
27 mW @ 4.5 V
ID MAX
32 A
NChannel MOSFET
D (58)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
SD
S 4800 D
S AYWWG D
GGD
4800
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS4800NTAG WDFN8 1500/Tape & Reel
(PbFree)
NTTFS4800NTWG WDFN8 5000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4800N/D
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

NTTFS4800N Даташит, Описание, Даташиты
NTTFS4800N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoAmbient – Steady State (Note 3)
JunctiontoAmbient – Steady State (Note 4)
JunctiontoAmbient – (t 10 s) (Note 3)
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V to 11.5 V
ID = 20 A
ID = 10 A
VGS = 4.5 V
ID = 20 A
ID = 10 A
VDS = 1.5 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 20 A
VGS = 10 V, VDS = 15 V, ID = 20 A
TurnOn Delay Time
td(on)
Rise Time
TurnOff Delay Time
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
3.7
56.7
146
27.8
Unit
°C/W
Min Typ Max Unit
30
16.2
V
mV/°C
1.0
10
±100
mA
nA
1.5 3.0 V
5.7 mV/°C
11.1 20 mW
11
18 27
17
28 S
964 pF
225
125
8.4 nC
1.2
3.4
3.8
16.6 nC
11.1 ns
21.8
14
3.4
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

NTTFS4800N Даташит, Описание, Даташиты
NTTFS4800N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
7.6 ns
19.5
19
2.1
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 20 A
TJ = 25°C
TJ = 125°C
VGS
=
0
VI,Sd=IS/2d0t
=
A
100
A/ms,
0.93 1.2 V
0.83
16.8 ns
8.7
8.1
6.8 nC
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
0.66 nH
0.20
1.5
1.5 3.0 W
http://onsemi.com
3
Free Datasheet http://www.datasheet4u.com/










Скачать PDF:

[ NTTFS4800N.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTTFS4800NPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск