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PDF NTTFS4840N Data sheet ( Hoja de datos )

Número de pieza NTTFS4840N
Descripción Power MOSFET ( Transistor )
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NTTFS4840N
Power MOSFET
30 V, 26 A, Single NChannel, m8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
Point of Load
Power Load Switch
Notebook Battery Management
Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
7.3 A
TA = 85°C
5.3
TA = 25°C
PD
2.2 W
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C ID 10.3 A
TA = 85°C
7.5
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Current Limited by Pkg.
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
PD
ID
PD
ID
PD
IDM
IDmaxPkg
TJ,
Tstg
IS
dV/dt
4.4 W
4.6 A
3.3
0.84 W
26 A
19
27.8 W
77
20
55 to
+150
23
6.0
A
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche Energy EAS 16.7 mJ
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 18.3 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
October, 2009 Rev. 0
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
24 mW @ 10 V
36 mW @ 4.5 V
ID MAX
26 A
NChannel MOSFET
D (58)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
SD
S 4840 D
S AYWWG D
GGD
4840
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS4840NTAG WDFN8 1500/Tape & Reel
(PbFree)
NTTFS4840NTWG WDFN8 5000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4840N/D
Free Datasheet http://www.datasheet4u.com/

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NTTFS4840N pdf
NTTFS4840N
TYPICAL CHARACTERISTICS
1000
900
800
700
600
500
400
300
200
100
0
0
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
5 10 15 20 25
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
td(off)
tr
tf
td(on)
10
9 QT
8
7
6
5 Qgs
4
Qgd
3 TJ = 25°C
2 VDD = 15 V
1
VGS = 10 V
ID = 20 A
0
0 1 2 3 4 5 6 7 8 9 10 11
Qg, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
20
15
10
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
10 ms
10
100 ms
1
VGS = 20 V
Single Pulse
0.1 TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
1
1 ms
10 ms
dc
10 100
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
5
VGS = 0 V
TJ = 25°C
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCETODRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
18
16 ID = 18.3 A
14
12
10
8
6
4
2
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
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