|
|
Datasheet HF5-12S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HF5-12S | NPN SILICON RF POWER TRANSISTOR HF5-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF5-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• PG = 20 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5 W (PEP) • Omnigold™ Metalization System
B
C E
ØC
E B
H I J
D
MAXIMUM RATINGS
#8-32 UNC-2A
|  Advanced Semiconductor | transistor |
HF5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HF5-12F | NPN SILICON RF POWER TRANSISTOR HF5-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF5-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES:
• PG = 20 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5.0 W (PEP) • Omnigold™ Metalization System
F
E B
C D E
C E
Ø.125 NOM. FULL R J .125
MAXIM Advanced Semiconductor transistor | | |
| 2 | HF5-12S | NPN SILICON RF POWER TRANSISTOR HF5-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF5-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• PG = 20 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5 W (PEP) • Omnigold™ Metalization System
B
C E
ØC
E B
H I J
D
MAXIMUM RATINGS
#8-32 UNC-2A
Advanced Semiconductor transistor | | |
| 3 | HF50-12 | NPN SILICON RF POWER TRANSISTOR HF50-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF50-12 is Designed for 12.5 Volt Class AB and Class C Power Amplifier Applications Operating in the 2 to 32 MHz HF Band.
FEATURES INCLUDE:
• High Gain, 16 dB Typical @ 30 MHz • Emitter Ballasting • Withstands Severe Mismatch
MAXIMUM Advanced Semiconductor transistor | | |
| 4 | HF50-12F | NPN SILICON RF POWER TRANSISTOR HF50-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF50-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES:
• PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 30 W (PEP) • Omnigold™ Metalization System
F
E B
C D E
C E
Ø.125 NOM. FULL R J .125
MAX Advanced Semiconductor transistor | | |
| 5 | HF50-12S | NPN SILICON RF POWER TRANSISTOR HF50-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF50-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
B
• PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 50 W (PEP) • Omnigold™ Metalization System
D
C E
ØC
E B
H I J
MAXIMUM RATINGS
IC VCBO VC Advanced Semiconductor transistor | |
| Esta página es del resultado de búsqueda del HF5-12S. Si pulsa el resultado de búsqueda de HF5-12S se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |