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PDF HF8-28F Data sheet ( Hoja de datos )
| Número de pieza | HF8-28F | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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HF8-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF8-28F is Designed for
FEATURES:
• PG = 21 dB min. at 8 W/30 MHz
• IMD3 = -30 dBc max. at 8 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 1.0 A
VCBO
65 V
VCEO
35 V
VCES
65 V
VEBO
PDISS
TJ
T STG
θ JC
4.0 V
13.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
13.5 OC/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
EC
Ø.125 NOM.
FULL R
J
.125
BE
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10600
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 200 mA
BVCBO
IC = 200 mA
BVEBO
IE = 10 mA
ICBO
VCB = 30 V
hFE VCE = 5.0 V
IC = 200 mA
MINIMUM TYPICAL MAXIMUM
35
65
65
4.0
1.0
5.0 ---
UNITS
V
V
V
V
mA
---
COB VCB = 30 V
f = 1.0 MHz
15 pF
GP
POUT
VCC = 28 V
PIN = 1.0 W
f = 150 MHz
10
10
--- dB
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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