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PDF HFA04TB60 Data sheet ( Hoja de datos )
| Número de pieza | HFA04TB60 | |
| Descripción | Ultrafast/ Soft Recovery Diode | |
| Fabricantes | International Rectifier | |
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Bulletin PD -2.399 rev. A 11/00
HEXFREDTM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
HFA04TB60
Ultrafast, Soft Recovery Diode
BASE
CATHODE
4
2
1
CATHODE
3
ANODE
2
VR = 600V
VF = 1.8V
Qrr * = 40nC
di(rec)M/dt * = 280A/µs
* 125°C
Description
International Rectifier's HFA04TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA04TB60 is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA04TB60 is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
TO-220AC
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
600
4.0
25
16
25
10
-55 to +150
Units
V
A
W
C
1
1 page  
HFA04TB60
Bulletin PD-2.399 rev. A 11/00
REVERSE RECOVERY CIRCUIT
VR = 200V
L = 70µH
0.01 Ω
D.U.T.
dif/dt
ADJUST G
D
IRFP250
S
IF
0
3
trr
ta
tb
2 I RRM
Qrr 4
0.5 I RRM
di(rec)M/dt
5
0.75 IRRM
1 dif /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
www.irf.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFA04TB60.PDF ] | |
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