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PDF HFA100MD60C Data sheet ( Hoja de datos )
| Número de pieza | HFA100MD60C | |
| Descripción | HEXFRED Ultrafast/ Soft Recovery Diode | |
| Fabricantes | International Rectifier | |
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HEXFREDTM
PD-2.442
HFA100MD60C
Ultrafast, Soft Recovery Diode
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
LUG
LUG
LUG
TERMINAL TERMINAL TERMINAL
ANODE 1 CATHODE ANODE 2
BASE (ISOLATED)
VR = 600V
VF = 1.4V
Qrr * = 780nC
di(rec)M/dt * = 240A/µs
* 125°C
Description
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
TO-244AB
(ISOLATED)
Absolute Maximum Ratings (per Leg)
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
IAS
EAS
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Single Pulse Avalanche Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
83
40
400
2.0
220
180
71
-55 to +150
Units
V
A
µJ
W
C
Thermal - Mechanical Characteristics
RθJC
RθCS
Wt
Parameter
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
Case-to-Sink, Flat , Greased Surface
W eight
Mounting Torque
Terminal Torque
See Fig. 12
Min.
––––
––––
––––
––––
35 (4.0)
50 (5.7)
Typ.
––––
––––
0.10
79 (2.8)
––––
––––
Max.
0.70
0.35
––––
––––
50 (5.7)
75 (8.5)
Units
°C/W
K/W
g (oz)
lbf•in
(N•m)
Note: Limited by junction temperature
L = 100µH, duty cycle limited by max TJ
To Order
Revision 0
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HFA100MD60C
REVERSE RECOVERY CIRCUIT
VR = 200V
L = 70µH
0.01 Ω
D.U.T.
dif/dt
ADJUST G
D
IRFP250
S
IF
0
3
trr
ta
tb
2
I RRM
Qrr 4
0.5 I RRM
di(rec)M/dt 5
0.75 IRRM
1 dif /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
4. Qrr - Area under curve defined by rtr
and IRRM
trr X IRRM
Qrr =
2
3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of
going IF to point where a line passing current during tb portion of trr
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
DUT
CURRENT
MONITOR
L = 100µH
Rg = 25 ohm
HIGH-SPEED
SWITCH
FREE-WHEEL
DIODE
+
Vd = 50V
I L(PK)
V (AVAL)
V R(RATED)
DECAY
TIME
Fig. 11 - Avalanche Test Circuit and Waveforms
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST
ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
To Order
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